Infineon IQE N-Channel MOSFET 253 A, 30 V, 8-Pin PQFN Surface Mount IQE008N03LM5CGATMA1

The Infineon IQE008N03LM5CGATMA1 is a high-performance N-Channel MOSFET designed for efficient power management in electronic applications. This device features a maximum continuous drain current of 253 A and a drain-source voltage of 30 V, enabling it to handle substantial power loads with minimal losses.

Housed in a compact 8-pin PQFN package measuring 3.3 mm in length, it supports surface mount technology suitable for modern PCB assembly. The MOSFET exhibits a low on-resistance of 0.85 milliohm which reduces conduction losses and improves overall efficiency in power circuits.

With a maximum power dissipation of 81 W and a typical gate charge of 80 nC at a gate-source voltage of 8 V, it ensures fast switching speeds and reliable thermal performance. The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and power electronics environments.

This MOSFET complies with RoHS requirements and meets the AEC-Q101 automotive standard, offering guaranteed reliability and environmental compliance for automotive applications. The forward voltage of 730 mV contributes to efficient conduction, and the maximum gate-source voltage rating of 16 V protects the device gate from damage.

Ideal for industrial, automotive, and power management applications, the Infineon IQE008N03LM5CGATMA1 offers enhanced thermal capabilities and advanced power density, enabling designers to optimize system performance and minimize active cooling requirements.

Features a low on-resistance of 0.85 milliohm enhancing conduction efficiency. Supports a maximum power dissipation of 81 W for high power applications. Typical gate charge of 80 nC at a gate-source voltage of 8 V ensures fast switching.

Operates within a temperature range from -55°C to a maximum of 150°C for robust performance. Complies with RoHS and automotive AEC-Q101 standards ensuring quality and reliability. Forward voltage drop is approximately 730 mV contributing to efficiency gains.

Designed for surface mount with package dimensions of 3.3 mm length. Maximum gate-source voltage rating of 16 V to protect gate integrity.

This product is well-suited for use in industrial power electronics, automotive powertrain systems, and advanced electronic designs requiring reliable performance under demanding conditions. Explore more components for robust electronic designs at EnvMart.