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Infineon Single IGBT Module 2.4 kA 3300 V AG-IHVB190 with TRENCHSTOP IGBT4 FZ2400R33HE4BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 38.5mm
Length 190mm
Model FZ2400R33HE4BPSA1
Configuration Single
Maximum Operating Temperature 150°C
Package Type AG-IHVB190
Minimum Operating Temperature -40°C
Maximum Continuous Collector Current Ic 2.4kA
Maximum Collector Emitter Voltage Vceo 3300V
Maximum Collector Emitter Saturation Voltage VceSAT 3.25V
Maximum Power Dissipation Pd 5400kW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 3

Key Features

  • This module supports a maximum continuous collector current of 2.4 kA.
  • It provides a maximum collector emitter voltage rating of 3300 V.
  • Equipped with TRENCHSTOP™ IGBT4 and an emitter controlled 4 diode design.
  • The package type is AG-IHVB190 with a single transistor configuration.
  • Maximum power dissipation is rated at 5400 kW, ensuring high efficiency.
  • It supports a maximum gate emitter voltage of 20 V for robust control.
  • The saturation voltage is low at 3.25 V, minimizing conduction losses.
  • Operating temperature range extends from -40°C to 150°C, suitable for harsh environments.

Product Description

Infineon FZ2400R33HE4BPSA1 is a single IGBT module specifically engineered with TRENCHSTOP™ IGBT4 technology and an emitter controlled 4 diode, providing outstanding performance in power electronic applications.

This module yields a maximum continuous collector current of 2.4 kA and withstands a collector emitter voltage of 3300 V, making it ideal for high voltage industrial use.

The AG-IHVB190 package embraces a compact form factor with dimensions 190 mm in length and 38.5 mm in height which helps integration in power converters, motor drives, and industrial automation systems.

Featuring a maximum power dissipation capacity of 5400 kW, the module maintains efficient thermal management via an AlSiC base plate which increases thermal cycling capability, enhancing longevity and reliability.

Rated for harsh environments, this IGBT module operates smoothly between -40°C and 150°C, offering robustness for demanding industrial, manufacturing, and energy applications. This single transistor configuration module reduces circuit complexity while maintaining high efficiency.

The maximum gate emitter voltage is 20 V, allowing precise switching control for power regulation. It has a collector emitter saturation voltage of 3.25 V ensuring reduced power losses. Industry standard AG-IHVB190 packaging facilitates easy mounting and connection.

Widely applicable in sectors such as industrial automation, power conversion, manufacturing equipment, and renewable energy systems. Choose Infineon for advanced power semiconductor modules with proven technology and high reliability. Explore more in the IGBT Module category at EnvMart.

Infineon Single IGBT Module 2.4 kA 3300 V AG-IHVB190 with TRENCHSTOP IGBT4 FZ2400R33HE4BPSA1
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Frequently Asked Questions

The maximum continuous collector current of this module is 2.4 kA.

It has a maximum collector emitter voltage rating of 3300 V.

The module supports a maximum power dissipation of 5400 kW.

It operates within a temperature range of -40°C to 150°C.

The maximum gate emitter voltage is rated at 20 V.

The collector emitter saturation voltage is low at 3.25 V.

The module is packaged in an AG-IHVB190 type.

It has dimensions of 190 mm in length and 38.5 mm in height.

This IGBT module features a single transistor configuration.

It is engineered with TRENCHSTOP™ IGBT4 technology.

This module is widely applicable in industrial automation, power conversion, manufacturing equipment, and renewable energy systems.

The country of origin for this IGBT module is India.

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