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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP65R110CFD7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Maximum Power Dissipation Pd | 114W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPP65R110CFD7XKSA1 CoolMOS N-Channel MOSFET is a robust semiconductor designed for high-power resonant topologies. This MOSFET integrates a fast body diode, making it suitable for industrial applications such as servers, telecommunications, solar power systems, and electric vehicle charging stations.
The device supports a continuous drain current of 22 A and withstands a drain-source voltage of 700 V, offering excellent hard-commutation ruggedness and an extra safety margin for designs with increased bus voltage. Its low drain-source resistance improves efficiency and power density.
Industrial SMPS applications benefit from this MOSFET's outstanding light-load and full-load efficiency, contributing to significant energy savings. The gate charge of 41 nC supports rapid switching speeds, enhancing performance in power management circuits.
Manufactured to operate reliably across a broad temperature spectrum from -55°C to 150°C, this component ensures durability under various environmental conditions. Its TO-220 3-pin package is optimized for through hole mounting, providing ease of assembly and thermal management.
Compact physical dimensions (10.36 mm length, 4.57 mm width, and 9.45 mm height) enable flexible integration into compact electronic designs. The forward voltage of 1 V further enhances overall efficiency and operational stability.
Handles a maximum continuous drain current of 22 A. Operates at a maximum drain-source voltage of 700 V. Equipped with a 3-pin TO-220 package for through hole mounting. Features low drain-source resistance of 110 mΩ ensuring efficient conduction.
Maximum gate-source voltage rating of 20 V enhances device reliability. Has a maximum power dissipation of 114 W for heavy duty use. Operates within a wide temperature range, from -55°C to 150°C. Typical gate charge of 41 nC allows fast switching performance.
Forward voltage of 1 V optimizes device efficiency. Compact dimensions: length 10.36 mm, width 4.57 mm, height 9.45 mm.
This Infineon CoolMOS MOSFET is ideal for applications requiring efficient power switching and high reliability, including industrial power supplies, telecommunication systems, solar inverters, and EV chargers. Its combination of efficiency, robust performance, and compact design make it a preferred choice among engineers.
Explore the extensive selection of MOSFETs and semiconductor components available at EnvMart to find the perfect match for your industrial and electronic needs.
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