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Infineon CoolMOS N-Channel MOSFET 22 A 700 V 3-Pin TO-220 IPP65R110CFD7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP65R110CFD7XKSA1
Width 4.57mm
Mount Type Through Hole
Series CoolMOS
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 22A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 110mΩ
Maximum Power Dissipation Pd 114W
Typical Gate Charge Qg @ Vgs 41nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Handles a maximum continuous drain current of 22 A.
  • Operates at a maximum drain-source voltage of 700 V.
  • Equipped with a 3-pin TO-220 package for through hole mounting.
  • Features low drain-source resistance of 110 mΩ ensuring efficient conduction.
  • Maximum gate-source voltage rating of 20 V enhances device reliability.
  • Has a maximum power dissipation of 114 W for heavy duty use.
  • Operates within a wide temperature range, from -55°C to 150°C.
  • Typical gate charge of 41 nC allows fast switching performance.

Product Description

Infineon IPP65R110CFD7XKSA1 CoolMOS N-Channel MOSFET is a robust semiconductor designed for high-power resonant topologies. This MOSFET integrates a fast body diode, making it suitable for industrial applications such as servers, telecommunications, solar power systems, and electric vehicle charging stations.

The device supports a continuous drain current of 22 A and withstands a drain-source voltage of 700 V, offering excellent hard-commutation ruggedness and an extra safety margin for designs with increased bus voltage. Its low drain-source resistance improves efficiency and power density.

Industrial SMPS applications benefit from this MOSFET's outstanding light-load and full-load efficiency, contributing to significant energy savings. The gate charge of 41 nC supports rapid switching speeds, enhancing performance in power management circuits.

Manufactured to operate reliably across a broad temperature spectrum from -55°C to 150°C, this component ensures durability under various environmental conditions. Its TO-220 3-pin package is optimized for through hole mounting, providing ease of assembly and thermal management.

Compact physical dimensions (10.36 mm length, 4.57 mm width, and 9.45 mm height) enable flexible integration into compact electronic designs. The forward voltage of 1 V further enhances overall efficiency and operational stability.

Handles a maximum continuous drain current of 22 A. Operates at a maximum drain-source voltage of 700 V. Equipped with a 3-pin TO-220 package for through hole mounting. Features low drain-source resistance of 110 mΩ ensuring efficient conduction.

Maximum gate-source voltage rating of 20 V enhances device reliability. Has a maximum power dissipation of 114 W for heavy duty use. Operates within a wide temperature range, from -55°C to 150°C. Typical gate charge of 41 nC allows fast switching performance.

Forward voltage of 1 V optimizes device efficiency. Compact dimensions: length 10.36 mm, width 4.57 mm, height 9.45 mm.

This Infineon CoolMOS MOSFET is ideal for applications requiring efficient power switching and high reliability, including industrial power supplies, telecommunication systems, solar inverters, and EV chargers. Its combination of efficiency, robust performance, and compact design make it a preferred choice among engineers.

Explore the extensive selection of MOSFETs and semiconductor components available at EnvMart to find the perfect match for your industrial and electronic needs.

Infineon CoolMOS N-Channel MOSFET 22 A 700 V 3-Pin TO-220 IPP65R110CFD7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 22 A.

It operates at a maximum drain-source voltage of 700 V.

This model comes in a 3-pin TO-220 package for through hole mounting.

The maximum power dissipation is 114 W, suitable for heavy duty use.

It operates within a wide temperature range from -55°C to 150°C.

The typical gate charge is 41 nC, which supports fast switching performance.

It features a low drain-source resistance of 110 mΩ, ensuring efficient conduction.

The maximum gate-source voltage rating is 20 V, enhancing device reliability.

The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.

It is suitable for applications such as industrial power supplies, telecommunications, solar inverters, and electric vehicle chargers.

The forward voltage is 1 V, which optimizes device efficiency.

This model is an N-channel MOSFET, designed for high-power resonant topologies.

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