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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC005N03LS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 433A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC005N03LS5ATMA1 is a high-current N-Channel MOSFET from the OptiMOS™ series, rated for 433 A maximum continuous drain current and 30 V drain-source voltage in an 8-pin TDSON surface-mount package. Designed for demanding thermal environments, it offers low conduction losses and robust performance across a broad operating temperature range of -55°C to 175°C, making it ideal for industrial, telecommunications, server power, and motor control applications.
The device features a low 5.5 mΩ maximum drain-source resistance (Rds(on)) which minimizes conduction losses under heavy load. Its typical gate charge of 59 nC at Vgs = 5 V allows engineers to plan accurate gate-drive energy requirements. Additionally, the MOSFET can handle power dissipation up to 188 W when mounted with appropriate PCB thermal management, enabling efficient high-power switching in compact assemblies.
The ±20 V maximum gate-source voltage specification provides wide drive safety margin, making it suitable for robust driver circuits. Its compact dimensions (length 5.49mm, width 6.35mm, height 1.1mm) ensure a low-profile footprint compatible with modern surface-mount technologies.
Low Rds(on) minimizes conduction losses in power stages. High current rating supports heavy-current switching needs. Wide temperature operation enables use in harsh industrial environments. Compact TDSON package facilitates space-saving high-power design.
Robust gate voltage rating provides expansive drive margin. Ideal for telecom, server, motor drive, and battery management applications.
The Infineon OptiMOS™ BSC005N03LS5ATMA1 MOSFET is a reliable choice for demanding industrial and commercial power management solutions. It meets surface-mount assembly requirements while delivering high efficiency and thermal performance.
Explore more precision semiconductor components in the Electronics & Electricals section on EnvMart, where you can find a wide range of power MOSFETs and related discrete semiconductor devices for your industrial and laboratory applications.
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