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Infineon OptiMOS™ N-Channel MOSFET 433 A, 30 V, 8-Pin TDSON Surface Mount Package BSC005N03LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 5.49mm
Model BSC005N03LS5ATMA1
Width 6.35mm
Mount Type Surface
Series OptiMOS™
Maximum Operating Temperature 175°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 433A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 5.5mΩ
Maximum Power Dissipation Pd 188W
Typical Gate Charge Qg @ Vgs 59nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • This MOSFET features low 5.5 mΩ Rds(on) for reduced conduction losses.
  • It supports up to 188 W power dissipation for high-power handling.
  • The device operates within a wide temperature range from -55°C to 175°C.
  • A 59 nC typical gate charge allows predictable gate-drive energy planning.
  • The maximum gate-source voltage rating is ±20 V, providing wide drive margin.
  • The TDSON 8-pin package offers a compact, low-profile surface-mount solution.
  • Suitable for high-current DC-DC converters, telecom power modules, and motor-drive stages.

Product Description

Infineon BSC005N03LS5ATMA1 is a high-current N-Channel MOSFET from the OptiMOS™ series, rated for 433 A maximum continuous drain current and 30 V drain-source voltage in an 8-pin TDSON surface-mount package. Designed for demanding thermal environments, it offers low conduction losses and robust performance across a broad operating temperature range of -55°C to 175°C, making it ideal for industrial, telecommunications, server power, and motor control applications.

The device features a low 5.5 mΩ maximum drain-source resistance (Rds(on)) which minimizes conduction losses under heavy load. Its typical gate charge of 59 nC at Vgs = 5 V allows engineers to plan accurate gate-drive energy requirements. Additionally, the MOSFET can handle power dissipation up to 188 W when mounted with appropriate PCB thermal management, enabling efficient high-power switching in compact assemblies.

The ±20 V maximum gate-source voltage specification provides wide drive safety margin, making it suitable for robust driver circuits. Its compact dimensions (length 5.49mm, width 6.35mm, height 1.1mm) ensure a low-profile footprint compatible with modern surface-mount technologies.

Low Rds(on) minimizes conduction losses in power stages. High current rating supports heavy-current switching needs. Wide temperature operation enables use in harsh industrial environments. Compact TDSON package facilitates space-saving high-power design.

Robust gate voltage rating provides expansive drive margin. Ideal for telecom, server, motor drive, and battery management applications.

The Infineon OptiMOS™ BSC005N03LS5ATMA1 MOSFET is a reliable choice for demanding industrial and commercial power management solutions. It meets surface-mount assembly requirements while delivering high efficiency and thermal performance.

Explore more precision semiconductor components in the Electronics & Electricals section on EnvMart, where you can find a wide range of power MOSFETs and related discrete semiconductor devices for your industrial and laboratory applications.

Infineon OptiMOS™ N-Channel MOSFET 433 A, 30 V, 8-Pin TDSON Surface Mount Package BSC005N03LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 433 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

It can handle a maximum power dissipation of 188 W when properly mounted with appropriate thermal management.

The typical gate charge at Vgs = 5 V is 59 nC.

The dimensions of the TDSON package are 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.

The maximum gate-source voltage rating for this MOSFET is ±20 V.

It operates within a wide temperature range from -55°C to 175°C.

This model uses a surface mount type for installation.

The maximum drain-source resistance (Rds(on)) is 5.5 mΩ.

It is suitable for high-current DC-DC converters, telecom power modules, and motor-drive stages.

This MOSFET has 8 pins.

This model belongs to the OptiMOS™ series.

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