Infineon ISP Type P-Channel MOSFET 100 V 990 mA Enhancement Mode 3-Pin SOT-223 ISP20EP10LMXTSA1

The Infineon ISP20EP10LMXTSA1 is a high-performance P-Channel MOSFET intended for use in medium and low power electronics applications such as battery management, load switching, and reverse polarity protection.

This semiconductor device features an enhancement channel type with a maximum continuous drain current of 990 mA and a maximum drain-source voltage of 100 V, making it suitable for efficient circuit control and switching.

Its compact SOT-223 surface mount package and 3-pin configuration allow for easy integration into PCBs while maintaining a small footprint with dimensions of 7.3 mm length, 1.8 mm width, and 6.7 mm height.

The low on-resistance (2 ohms) and a typical gate charge of 3.5 nC at a gate voltage optimize switching efficiency and reduce power loss. It can safely dissipate up to 4.2 watts, supporting robust operation across a wide temperature range from -55°C to 175°C.

Additional features include avalanche ruggedness for high reliability and a maximum gate-source voltage tolerance of 20 V, making it well-suited for demanding industrial, automotive, and battery-powered device applications.

This MOSFET is ideal for industrial automation, consumer electronics, and power management, providing a reliable interface to microcontrollers and fast switching capabilities.

Engineers and designers benefit from its standard industry footprint for straightforward PCB design along with the increased security of supply associated with Infineon's OptiMOS technology.

Explore a broad range of MOSFETs and other discrete semiconductor components suitable for your electronic design challenges at EnvMart. Designed for battery management and load switch applications. Operates with an enhancement-mode channel for simplified circuitry integration.

Features low drain-source resistance of 2 ohms to improve efficiency. Has a maximum power dissipation of 4.2 watts for reliable performance. Supports an operating temperature range from -55°C to 175°C. Incorporates avalanche ruggedness for durability in demanding environments.

Compact dimensions: length 7.3 mm, width 1.8 mm, height 6.7 mm. Typical gate charge of 3.5 nC at gate-source voltage. Maximum gate-source voltage rating of 20 V ensures robust control. Browse the Electronics & Electricals category at EnvMart for high-quality semiconductor devices from trusted suppliers like Infineon.