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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 3.8mm |
| Model | ISC036N04NM5ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 98A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.8mΩ |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
Infineon ISC036N04NM5ATMA1 N-Channel MOSFET is a high-performance power transistor designed for industrial and electronic applications requiring efficient switching and thermal robustness. It supports a continuous drain current of up to 98 A and withstands a maximum drain-source voltage of 40 V. Packaged in a compact TDSON-8 FL 8-pin surface mount form, it is ideal for space-sensitive PCB layouts while providing robust electrical performance.
This MOSFET features a low typical gate charge of 28 nC at gate-source voltage, which reduces switching losses and improves efficiency in power conversion tasks. With a maximum power dissipation of 63 W, the device can handle demanding load conditions without degradation.
Engineered to operate over a wide temperature range from -55°C to 175°C, the ISC036N04NM5ATMA1 suits automotive, industrial, and consumer electronics environments where temperature resilience is critical. Its high threshold voltage mitigates false turn-on issues from noisy electronic environments, ensuring stable operation.
The device is 100% avalanche tested and includes features like low RDS(on) and optimized QGD/QGS ratios to enhance robustness against unwanted gate voltage spikes, making it suitable for switching at higher frequencies. This MOSFET complies with strict environmental requirements, including RoHS and halogen-free standards as per IEC61249-2-21 regulations.
Typical applications include battery-powered devices, low-voltage motor driver circuits, and other power-sensitive electronic modules requiring efficiency and reliability. The compact 3.8 mm by 4.4 mm by 1.1 mm package size enables integration into modern electronics assemblies.
The device’s superior thermal resistance ensures long-term durability in power modules and electronic systems. RoHS compliance and Pb-free lead plating contribute to environmental safety and regulatory compliance. Its normal level threshold voltage and avalanche testing contribute to application robustness and performance consistency.
Available with full technical documentation, the Infineon ISC036N04NM5ATMA1 is a high-quality power MOSFET suited for industrial, automotive, and consumer electronics sectors. Browse the full range of MOSFETs at EnvMart for compatible components and alternatives.
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