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Infineon ISC N-Channel MOSFET, 98 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.4mm
Length 3.8mm
Model ISC036N04NM5ATMA1
Width 1.1mm
Mount Type Surface
Series ISC
Maximum Operating Temperature 175°C
Package Type TDSON-8 FL
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 98A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 2.8mΩ
Maximum Power Dissipation Pd 63W
Typical Gate Charge Qg @ Vgs 28nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • The device features a TDSON-8 FL 8-pin surface mount package for compact PCB integration.
  • Provides a low typical gate charge of 28 nC at Vgs, improving switching efficiency.
  • Maximum power dissipation capability is 63 W for robust operation under load.
  • Operation temperature ranges from -55°C to a maximum of 175°C, suitable for demanding environments.
  • Resistant to false turn-on due to noise with higher threshold voltage design.
  • Designed to reduce switching losses with low Rds(on) and gate charge ratios.
  • Complies with RoHS standards and uses Pb-free lead plating for environmental safety.
  • Optimized for battery-powered applications and low-voltage motor drives.

Product Description

Infineon ISC036N04NM5ATMA1 N-Channel MOSFET is a high-performance power transistor designed for industrial and electronic applications requiring efficient switching and thermal robustness. It supports a continuous drain current of up to 98 A and withstands a maximum drain-source voltage of 40 V. Packaged in a compact TDSON-8 FL 8-pin surface mount form, it is ideal for space-sensitive PCB layouts while providing robust electrical performance.

This MOSFET features a low typical gate charge of 28 nC at gate-source voltage, which reduces switching losses and improves efficiency in power conversion tasks. With a maximum power dissipation of 63 W, the device can handle demanding load conditions without degradation.

Engineered to operate over a wide temperature range from -55°C to 175°C, the ISC036N04NM5ATMA1 suits automotive, industrial, and consumer electronics environments where temperature resilience is critical. Its high threshold voltage mitigates false turn-on issues from noisy electronic environments, ensuring stable operation.

The device is 100% avalanche tested and includes features like low RDS(on) and optimized QGD/QGS ratios to enhance robustness against unwanted gate voltage spikes, making it suitable for switching at higher frequencies. This MOSFET complies with strict environmental requirements, including RoHS and halogen-free standards as per IEC61249-2-21 regulations.

Typical applications include battery-powered devices, low-voltage motor driver circuits, and other power-sensitive electronic modules requiring efficiency and reliability. The compact 3.8 mm by 4.4 mm by 1.1 mm package size enables integration into modern electronics assemblies.

The device’s superior thermal resistance ensures long-term durability in power modules and electronic systems. RoHS compliance and Pb-free lead plating contribute to environmental safety and regulatory compliance. Its normal level threshold voltage and avalanche testing contribute to application robustness and performance consistency.

Available with full technical documentation, the Infineon ISC036N04NM5ATMA1 is a high-quality power MOSFET suited for industrial, automotive, and consumer electronics sectors. Browse the full range of MOSFETs at EnvMart for compatible components and alternatives.

Infineon ISC N-Channel MOSFET, 98 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 98 A.

It can withstand a maximum drain-source voltage of 40 V.

The typical gate charge at gate-source voltage (Vgs) is 28 nC.

The maximum power dissipation capability is 63 W.

The package dimensions are 3.8 mm in length, 4.4 mm in width, and 1.1 mm in height.

The operating temperature range is from -55°C to a maximum of 175°C.

This model uses surface mounting.

The maximum gate-source voltage (Vgs) is 20 V.

This MOSFET has 8 pins.

The maximum drain-source resistance (Rds(on)) is 2.8 mΩ.

It is optimized for battery-powered applications and low-voltage motor drives.

Yes, it complies with RoHS standards and uses Pb-free lead plating for environmental safety.

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