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Infineon CoolSiC N-Channel MOSFET 36A 1.2kV Enhancement Mode 3-Pin TO-247 AIMW120R060M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.3mm |
| Length | 16.3mm |
| Model | AIMW120R060M1HXKSA1 |
| Width | 21.5mm |
| Mount Type | Through Hole |
| Series | CoolSiC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | 23V |
| Forward Voltage Vf | 5.2V |
Key Features
- Enhancement mode channel type provides efficient switching performance.
- TO-247 package with through-hole mounting enables reliable installation.
- Maximum power dissipation of 150 W supports high-power applications.
- Operating temperature range from -55°C to 175°C suits automotive and industrial environments.
- Typical gate charge of 31 nC at Vgs enhances switching efficiency.
- Maximum drain-source resistance of 60 mΩ ensures low conduction losses.
- Designed for automotive use with AEC-Q101 qualification.
Product Description
Infineon AIMW120R060M1HXKSA1 CoolSiC N-Channel MOSFET is engineered for high performance in automotive and power electronics fields. It supports a continuous drain current of 36 A and a maximum drain-source voltage of 1.2 kV, providing robust switching capabilities in demanding conditions.
The device is housed in a 3-pin TO-247 package suitable for through-hole mounting, facilitating easy integration into various circuit designs. Its enhancement mode channel type ensures efficient control and switching behavior under high voltage and current loads.
With a maximum power dissipation of 150 W, this MOSFET is capable of handling substantial power levels, suitable for on-board chargers, DC-DC converters, and other automotive electronic applications. The operating temperature range from -55°C up to 175°C makes it viable for harsh industrial and vehicle environments.
The typical gate charge of 31 nC at gate-source voltage improves switching speed and reduces energy losses during operation. The low maximum drain-source resistance of 60 mΩ contributes to overall device efficiency by minimizing conduction loss.
Enhancement mode N-channel MOSFET for improved switching efficiency. 36 A maximum continuous drain current for high-power applications. 1.2 kV drain-source voltage withstand capability for robustness. TO-247 package with 3 pins for easy through-hole mounting.
150 W maximum power dissipation enables heavy-duty use. Wide operational temperature range from -55°C to 175°C. Typical gate charge of 31 nC reduces switching losses. AEC-Q101 automotive standard qualification for reliability.
Compact dimensions of 16.3 mm length, 21.5 mm width, and 5.3 mm height.
This MOSFET is ideal for industrial, automotive, manufacturing, and power regulation applications requiring high efficiency and reliability. Its automotive AEC-Q101 standard presence ensures suitability for electric vehicles and other automotive systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 36 A.
It can withstand a maximum drain-source voltage of 1.2 kV.
This unit has a maximum power dissipation of 150 W, making it suitable for high-power applications.
It is housed in a TO-247 package, which is designed for through-hole mounting.
The typical gate charge at gate-source voltage (Vgs) is 31 nC, enhancing switching efficiency.
The maximum drain-source resistance is 60 mΩ, which helps to minimize conduction losses.
Yes, it is qualified under the AEC-Q101 automotive standard, ensuring reliability for automotive use.
The dimensions are 16.3 mm in length, 21.5 mm in width, and 5.3 mm in height.
It utilizes an enhancement mode N-channel, which provides efficient control and switching behavior.
The maximum gate-source voltage (Vgs) is 23 V.
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