Infineon N-Channel MOSFET, 44 A, 100 V, Enhancement Mode, 8-Pin SuperSO8 5 x 6 Package BSC0803LSATMA1

Infineon BSC0803LSATMA1 is an N-Channel MOSFET designed for efficient power switching applications with a maximum continuous drain current of 44 amperes and a maximum drain-to-source voltage of 100 volts. Housed in a compact 8-pin SuperSO8 package measuring 5 x 6 mm, this enhancement mode MOSFET offers low on-resistance of 14.6 milliohms, enabling low conduction losses in power supply and converter circuits.

With a maximum power dissipation of 52 watts and an operating temperature range from -55°C to 150°C, this device is suitable for demanding industrial, automotive, and consumer electronics environments. The maximum gate-to-source voltage rating of ±20 volts ensures reliable switching performance and device protection. Its typical gate charge of 7.6 nC supports high-speed switching in power management circuits.

The MOSFET's low forward voltage of approximately 1.1 V contributes to efficiency in switching power supplies, DC-DC converters, and motor control applications. The compact form factor with a 1.1 mm height and precise 5.49 x 6.35 mm footprint optimizes PCB space utilization, suitable for modern electronic designs emphasizing miniaturization.

Infineon’s OptiMOS 5 technology, featured in this model, optimizes performance and manufacturing lead times and is RoHS compliant with halogen-free lead plating according to IEC 61249-2-21 standards.

Supports maximum continuous drain current of 44 amperes for high power applications. Provides a maximum drain-to-source voltage of 100 volts suitable for low-voltage power delivery. Surface mount device package type is SuperSO8 with dimensions 5 x 6 mm.

Enhancement mode channel ensures low on-resistance with maximum 14.6 milliohms Rds(on). Maximum power dissipation rating of 52 watts allowing efficient thermal handling. Operating temperature range from -55°C to 150°C enables usage in harsh environments.

Maximum gate-to-source voltage rated at ±20 volts protects the device during switching operations. Typical gate charge of 7.6 nC facilitates fast switching performance in power circuits. Forward voltage drop of 1.1 V typical at rated conditions for efficient conduction.

Compact height of 1.1 mm, length 5.49 mm, and width 6.35 mm dimensions for space-saving PCB layouts.

This N-Channel MOSFET is ideal for use in industrial power management, consumer electronics, automotive electronics, and general purpose switching applications. Its robust thermal performance and compact design suit applications requiring efficient power conversion and switching reliability.

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