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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 800μm |
| Length | 1.7mm |
| Model | NTE4153NT1G |
| Width | 950μm |
| Mount Type | Surface |
| Series | NTE |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 915mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300mW |
| Typical Gate Charge Qg @ Vgs | 1.82nC |
| Maximum Gate Source Voltage Vgs | 6V |
| Forward Voltage Vf | 1.1V |
onsemi NTE4153NT1G is a small signal N-Channel MOSFET featuring a maximum continuous drain current of 915mA and a maximum drain-source voltage of 20V.
This enhancement mode device comes in a compact SC-89 surface mount package with 3 pins, measuring 1.7mm in length, 950μm in width, and 800μm in height, making it suitable for high-density PCB layouts.
The transistor offers a low maximum drain-source resistance of 950mΩ and a typical gate charge of 1.82nC at Vgs, improving switching efficiency and system power management.
Its forward voltage of 1.1V and maximum gate-source voltage of 6V contribute to improved system efficiency and robustness with built-in ESD protection and low threshold voltage rated at 1.5V.
The device is qualified to automotive standard AEC-Q101 and operates reliably over a temperature range of -55°C to 150°C, making it suitable for automotive and industrial applications.
Typical applications include load and power switches, power supply converter circuits, battery management systems, and various portable electronic devices such as cell phones, PDAs, digital cameras, and pagers.
Maximum continuous drain current of 915mA enabled for efficient load handling. 20V maximum drain-source voltage supports moderate voltage circuits. SC-89 surface mount package facilitates compact assembly and automated PCB mounting.
Robust operation across -55°C to 150°C temperature range meets industrial requirements. Low Rds(on) and gate charge optimize power efficiency and switching speeds. Implements ESD protection enhancing device and system reliability.
Complies with automotive AEC-Q101 quality standards. Compact dimensions of 1.7mm (L) x 950μm (W) x 800μm (H) enable space-saving designs. Suited for portable electronics and battery-powered applications requiring efficient power management.
This onsemi MOSFET is ideal for industrial, automotive, consumer electronics, manufacturing, and laboratory use where precise power switching and robust performance are critical. Explore more MOSFETs and discrete semiconductors in the Electronics & Electricals category on EnvMart for your project and product needs.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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