onsemi SUPERFET III N-Channel Power MOSFET 19A, 650V, 154W, Enhancement Mode, TO-220 Package FCP165N65S3

onsemi FCP165N65S3 SUPERFET III N-Channel Power MOSFET offers high voltage operation with a maximum drain-source voltage of 650 V and a continuous drain current rating of 19 A. Packaged in a TO-220 format with 3 pins, this enhancement mode MOSFET features a maximum power dissipation of 154 W, making it suitable for demanding power applications.

The device utilizes advanced charge balance technology to deliver low on-resistance of approximately 165 milliohms and an ultra-low typical gate charge of 39 nC, which together enable lower conduction and switching losses. It supports a maximum operating junction temperature of 150°C and a minimum operating temperature of -55°C, ensuring reliable operation in harsh environments.

Other technical highlights include an internal gate resistance of 4.6 ohms and a low forward voltage of 1.2 V that benefits efficiency in switching circuits. The product complies with RoHS, Pb-Free, and halide-free standards and originates from China.

This Power MOSFET is well suited for industrial, computing, consumer electronics, telecom/server equipment, LED lighting ballasts, and adapter end products such as notebook and desktop computers, game consoles, and LCD/LED TVs. Its robust performance characteristics help minimize power loss and improve overall system reliability.

Ultra low gate charge enables superior switching efficiency. Low effective output capacitance minimizes loss and improves speed. Optimized conduction properties reduce thermal stress and energy waste. High voltage rating suits a wide range of power electronics applications.

Through-hole TO-220 package simplifies assembly and cooling. Compliant with environmental and safety standards. Broad applicability across industrial, consumer, and telecom sectors. Explore EnvMart for more on power semiconductors and onsemi components designed for high-performance electronic systems and solutions.