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Infineon N-Channel MOSFET 100 A, 100 V Enhancement, 8-Pin TDSON, Surface Mount BSC040N10NS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 5.49mm
Model BSC040N10NS5ATMA1
Width 6.35mm
Mount Type Surface
Series BSC040N10NS5
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 5.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 139W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 860mV

Key Features

  • Enables handling of continuous drain current up to 100 A.
  • Supports maximum drain-source voltage of 100 V for high-voltage switching.
  • Features low on-resistance of 5.6 milliohms to reduce conduction losses.
  • Typical gate charge of 58 nC allows controlled switching dynamics.
  • Maximum power dissipation rating of 139 W for effective heat management.
  • Operates reliably between -55°C and 150°C temperature range.
  • Compact 8-pin leadless TDSON package facilitates automated assembly and thermal conduction.
  • Gate-source voltage tolerance up to ±20 V ensures robust gate drive.

Product Description

Infineon BSC040N10NS5ATMA1 is a high-performance N-Channel MOSFET designed for surface mount power switching solutions demanding high current and voltage capability. Rated for 100 A continuous drain current and a maximum of 100 V drain-source voltage, this enhancement-mode transistor offers efficient conduction with a low Rds(on) of 5.6 milliohms. It supports a typical gate charge of 58 nanocoulombs and can dissipate up to 139 W of power, enabling effective thermal management in compact layouts.

The device is housed in a low-profile, 8-pin leadless TDSON package standing only 1.1 mm high, supporting surface mounting with excellent thermal conduction via board copper and vias. It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.

The maximum gate-source voltage tolerance of ±20 V allows for robust gate driver designs that optimize switching speeds while protecting against voltage spikes. This MOSFET is ideally used in high-power DC-DC converters, motor inverter half-bridge stages on surface-mounted boards, battery management systems, server power modules, and synchronous rectifiers in power supply designs where efficiency and thermal handling are critical.

Enables continuous drain current capacity of 100 A for heavy load applications. Supports high-voltage switching with a 100 V maximum drain-source rating. Low on-resistance ensures minimal conduction losses enhancing overall efficiency.

Typical gate charge of 58 nC assists controlled switching and reduced electromagnetic interference. High maximum power dissipation allows for reliable thermal operation. Wide operating temperature range from -55°C to 150°C adjusts to diverse environmental conditions.

Compact TDSON package supports automated assembly and efficient PCB heat dissipation. Supports ±20 V gate-source voltage for flexibility in gate drive design. Ideal for industrial, automotive, and server power applications demanding robust performance.

Explore more high-quality discrete semiconductors and MOSFETs to enhance your industrial electronic designs at EnvMart.

Infineon N-Channel MOSFET 100 A, 100 V Enhancement, 8-Pin TDSON, Surface Mount BSC040N10NS5ATMA1
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Frequently Asked Questions

This model can handle a maximum continuous drain current of 100 A, making it suitable for heavy load applications.

It supports a maximum drain-source voltage of 100 V, allowing for high-voltage switching applications.

The on-resistance is rated at 5.6 milliohms, which helps reduce conduction losses and enhance overall efficiency.

The typical gate charge is 58 nanocoulombs, facilitating controlled switching dynamics.

This unit has a maximum power dissipation rating of 139 W, which is essential for effective thermal management.

The TDSON package has dimensions of 5.49 mm in length, 6.35 mm in width, and a height of 1.1 mm.

It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

The maximum gate-source voltage tolerance is ±20 V, ensuring robust gate drive designs.

This model is designed for surface mounting, which facilitates automated assembly.

It is ideally used in high-power DC-DC converters, motor inverter half-bridge stages, and battery management systems.

This model features an N-channel configuration, which is common for enhancement-mode transistors.

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