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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC040N10NS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC040N10NS5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 5.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 860mV |
Infineon BSC040N10NS5ATMA1 is a high-performance N-Channel MOSFET designed for surface mount power switching solutions demanding high current and voltage capability. Rated for 100 A continuous drain current and a maximum of 100 V drain-source voltage, this enhancement-mode transistor offers efficient conduction with a low Rds(on) of 5.6 milliohms. It supports a typical gate charge of 58 nanocoulombs and can dissipate up to 139 W of power, enabling effective thermal management in compact layouts.
The device is housed in a low-profile, 8-pin leadless TDSON package standing only 1.1 mm high, supporting surface mounting with excellent thermal conduction via board copper and vias. It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.
The maximum gate-source voltage tolerance of ±20 V allows for robust gate driver designs that optimize switching speeds while protecting against voltage spikes. This MOSFET is ideally used in high-power DC-DC converters, motor inverter half-bridge stages on surface-mounted boards, battery management systems, server power modules, and synchronous rectifiers in power supply designs where efficiency and thermal handling are critical.
Enables continuous drain current capacity of 100 A for heavy load applications. Supports high-voltage switching with a 100 V maximum drain-source rating. Low on-resistance ensures minimal conduction losses enhancing overall efficiency.
Typical gate charge of 58 nC assists controlled switching and reduced electromagnetic interference. High maximum power dissipation allows for reliable thermal operation. Wide operating temperature range from -55°C to 150°C adjusts to diverse environmental conditions.
Compact TDSON package supports automated assembly and efficient PCB heat dissipation. Supports ±20 V gate-source voltage for flexibility in gate drive design. Ideal for industrial, automotive, and server power applications demanding robust performance.
Explore more high-quality discrete semiconductors and MOSFETs to enhance your industrial electronic designs at EnvMart.
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