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onsemi N-Channel Power MOSFET, 60 V, 49 A, Enhancement Mode, 3-Pin TO-252 Package NVD5C668NLT4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NVD5C668NLT4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NVD5C668NL |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 49A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 44W |
| Typical Gate Charge Qg @ Vgs | 18.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a TO-252 3-pin package for compact surface mount installation.
- It has a low maximum drain-source resistance of 12.8 milliohms to ensure minimal power loss.
- The device operates in enhancement mode, with a typical gate charge of 18.7 nanoCoulombs at Vgs.
- Supports a maximum gate-source voltage of 20 V and can dissipate up to 44 W of power.
- Operating temperature range extends from -55°C to 175°C, compliant with AEC-Q101 automotive standard.
Product Description
onsemi NVD5C668NLT4G N-Channel Power MOSFET is a robust semiconductor device designed for efficient power control in industrial, automotive, and electronic applications. This transistor supports a maximum continuous drain current of 49 A at a drain-source voltage of 60 V, making it ideal for demanding switching and amplification tasks.
The enhancement mode channel ensures reliable switching behavior with a max Rds(on) of 12.8 milliohms, reducing power losses significantly. Its 3-pin TO-252 surface mount package provides an optimal footprint for space-constrained PCB layouts, with overall dimensions supporting effective thermal management.
With a maximum power dissipation rating of 44 W and broad operating temperature range from -55°C to 175°C, it meets tough industrial and automotive requirements including AEC-Q101 certification.
The typical gate charge of 18.7 nC at Vgs and maximum gate-source voltage rating of 20 V support fast switching frequencies and high voltage stability. This MOSFET features a TO-252 3-pin package for compact surface mount installation.
It has a low maximum drain-source resistance of 12.8 milliohms for efficient power handling. Designed for high continuous drain current applications up to 49 A. Operating temperature range is -55°C to 175°C, suitable for extended environmental conditions.
Complies with automotive standard AEC-Q101 for reliability in automotive systems. Power dissipation capability is rated at 44 W for robust thermal performance.
It is suitable for use in industrial power supplies, automotive electronics, motor controllers, and various consumer electronic devices where efficient power switching is required.
Explore more advanced semiconductor solutions and power MOSFETs in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 49 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It can dissipate up to 44 W of power.
The maximum gate-source voltage for this model is 20 V.
The typical gate charge at Vgs for this MOSFET is 18.7 nanoCoulombs.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The operating temperature range extends from -55°C to 175°C.
The maximum drain-source resistance (Rds) is 12.8 milliohms.
It uses an enhancement mode N-channel.
It complies with the AEC-Q101 automotive standard.
The mount type for this model is surface mount.
This MOSFET is suitable for use in industrial power supplies, automotive electronics, motor controllers, and various consumer electronic devices.
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