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Texas Instruments NexFET Type P-Channel MOSFET 104A 20V Enhancement 8-Pin VSON CSD25404Q3T
Specifications
| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | CSD25404Q3T |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | VSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 104A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 10.8nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1V |
Key Features
- Designed with NexFET technology for optimized performance in power applications.
- Comes in an 8-Pin VSON surface mount package for compact circuit design.
- Maximum power dissipation of 96W supports high-power operation.
- Operates efficiently from -55°C to 150°C with a typical gate charge of 10.8nC.
- Features a low maximum drain-source resistance of 150mΩ for minimal power loss.
- Suitable for surface mounting and high-density PCB layouts.
- Compact dimensions of 3.4mm length, 3.4mm width, and 1.1mm height enhance integration.
Product Description
Texas Instruments CSD25404Q3T NexFET Type P-Channel MOSFET is a high-performance transistor designed for power switching and amplification applications in electronics and electrical systems. It supports a maximum continuous drain current of 104A and a maximum drain-source voltage of 20V. The device operates in enhancement mode, providing efficient control over power delivery with minimal losses.
The MOSFET features an 8-Pin VSON surface mount package that enables compact circuit designs and is ideal for high-density PCB assemblies. With a maximum power dissipation of 96W, it supports demanding power conditions while maintaining thermal stability from -55°C to 150°C operating temperatures. Its forward voltage is -1V and it has a low maximum drain-source resistance (Rds) of 150mΩ, which reduces conduction losses and improves energy efficiency.
This device incorporates NexFET technology, promoting high speed switching capabilities for industrial, consumer electronics, and automotive applications. It also includes gate voltage protection between -12V and +12V ensuring device longevity. Its compact form factor with precise dimensions of 3.4mm by 3.4mm by 1.1mm allows seamless integration in surface mount technology (SMT) circuits.
Designed with NexFET technology enabling high efficiency in power applications. Compact 8-Pin VSON package suitable for surface mount assembly. High maximum continuous drain current of 104A for demanding loads. Low maximum drain-source resistance (150mΩ) to minimize power dissipation.
Operates across wide temperature range from -55°C up to 150°C. Typical gate charge of 10.8nC provides rapid switching performance. Compliant with advanced power management circuit requirements. Compact physical dimensions simplifying circuit board layout.
This MOSFET is commonly used in power management, motor control, DC-DC converters, and voltage regulation systems within industrial, automotive, telecommunications, and consumer electronics sectors. Its robust specifications and small footprint enable efficient, reliable performance in a wide range of electronic assemblies.
Explore more industrial-grade discrete semiconductor components including MOSFETs at EnvMart for efficient and advanced electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 104A.
It can handle a maximum drain-source voltage of 20V.
The maximum power dissipation is 96W, which supports high-power operation.
The dimensions are 3.4mm in length, 3.4mm in width, and 1.1mm in height.
It operates efficiently within a temperature range of -55°C to 150°C.
The typical gate charge is 10.8nC, providing rapid switching performance.
The maximum drain-source resistance is 150mΩ, which minimizes power loss.
It comes in an 8-Pin VSON surface mount package, suitable for compact circuit designs.
This model is a Type P-Channel MOSFET, designed for enhancement mode operation.
It is suitable for power management, motor control, DC-DC converters, and voltage regulation systems.
The forward voltage is -1V.
The maximum gate-source voltage is between -12V and +12V, ensuring device longevity.
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