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Infineon IPD Type P-Channel MOSFET, 180 A, 100 V, 3-Pin TO-252 Package IPD650P06NMATMA1

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Infineon IPD Type P-Channel MOSFET, 180 A, 100 V, 3-Pin TO-252 Package IPD650P06NMATMA1

Name: Infineon IPD Type P-Channel MOSFET, 180 A, 100 V, 3-Pin TO-252 Package IPD650P06NMATMA1
Brand: Infineon
SKU: 300528
Price: 1.23 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPD650P06NMATMA1
Mount Type	Surface
Series	IPD
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Capable of continuous drain current up to 180 amps for high power applications.
Maximum drain-source voltage rating of 100 volts ensures robust performance.
Low on-resistance of 0.7 milliohms reduces power losses significantly.
Typical gate charge of 80 nanocoulombs enables faster switching speeds.
Supports maximum power dissipation of 81 watts for thermal reliability.
Temperature operation range from -55°C to 175°C suitable for harsh environments.
Compliance with RoHS and automotive standard AEC-Q101 guarantees quality and reliability.
Enhanced mode N channel with forward voltage of 1 volt for efficient control.

Product Description

Infineon IPD650P06NMATMA1 is a P-Channel MOSFET designed for high power and high efficiency electronic circuits. Featuring a maximum continuous drain current of 180 A and a voltage rating of 100 V, this device is housed in a compact and surface mountable 3-Pin TO-252 package. It is engineered using Infineon's OptiMOSTM Power Transistor technology, providing ultra-low on-resistance of just 0.7 milliohms which minimizes conduction losses and improves overall efficiency.

This MOSFET is suitable for applications demanding high current capability like automotive systems, power management modules, and industrial electronics. Its typical gate charge of 80 nanocoulombs facilitates quick switching, enhancing performance in fast switching power supplies and motor control circuits. The device supports a maximum power dissipation of 81 W allowing it to handle significant power levels with adequate thermal management.

Operating temperatures range from -55°C to 175°C, making it resilient in demanding environments including automotive and industrial settings. It complies with RoHS environmental standards as well as the automotive industry AEC-Q101 qualification, ensuring reliability and compliance for automotive electronics use cases.

The Infineon IPD650P06NMATMA1 features a forward voltage of 1 V and is configured in enhancement mode with N channel operation, optimized for low losses and precise control. This makes it a reliable component for switching, DC-DC converters, and load switching applications.

Continuous drain current: 180 A. Drain-source voltage: 100 V. Package: 3-Pin TO-252 surface mount. On-resistance: 0.7 mΩ. Gate charge: 80 nC typical. Power dissipation: 81 W maximum. Operating temperature: -55°C to 175°C.

Standards: RoHS, AEC-Q101 automotive.

For electronics manufacturing, industrial automation, automotive power management, and laboratory use, this MOSFET provides excellent balance of current capacity and switching performance. Explore more components in Semiconductor > Discrete Semiconductors > MOSFET category on EnvMart for comprehensive industrial-grade solutions.