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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD650P06NMATMA1 |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon's IPD650P06NMATMA1 is a high-performance P-Channel MOSFET designed for discrete semiconductor applications requiring high current handling and voltage blocking capabilities. Packaged in a TO-252 surface mount format with 3 pins, this MOSFET supports a maximum continuous drain current (Id) of 180 amperes and a maximum drain-source voltage (Vds) of 100 volts. Its very low on-resistance (Rds(on)) of 0.7 milliohms facilitates minimal conduction losses and efficient power management.
The device operates effectively within a wide temperature range from -55°C to 175°C, making it suitable for use in automotive electronics, industrial machinery, power control, and other demanding environments. It features an enhancement mode channel with a maximum gate-source voltage (Vgs) rating of 20 V and a typical gate charge (Qg) of 80 nC, allowing rapid switching suitable for PWM and other control schemes.
Maximum power dissipation is rated at 81 W ensuring thermal robustness in operation. The MOSFET is fully RoHS compliant and meets AEC-Q101 automotive qualification standards, affirming its reliability and environmental compliance.
The IPD series MOSFETs finest OptiMOSTM technology offers Pb-free lead plating and halogen-free construction per IEC61249-2-21 standards. This enables environmentally safe manufacturing and disposal.
High continuous drain current of 180A for demanding power applications. 100 V max drain-source voltage with low Rds(on) of 0.7 milliohm. 3-pin TO-252 surface mount package suitable for automated PCB assembly. Wide operation temperature (-55°C to 175°C) for harsh industrial conditions.
Compatible with automotive electronics standards AEC-Q101 and RoHS compliant. Low forward voltage drop of 1 V improves efficiency. Typical gate charge of 80 nC enables fast switching response.
This MOSFET is ideal for use in power conversion, motor drivers, automotive ECU circuits, and industrial control systems. Its strong power handling combined with surface mounting capability facilitates compact, reliable designs.
Explore our Electronics & Electricals category for related semiconductors and discrete components to optimize your circuit designs on EnvMart.
Explore more products in our Power MOSFET category.
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