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Infineon P-Channel MOSFET 180 A 100 V Surface Mount TO-252 Package IPD650P06NMATMA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPD650P06NMATMA1
Mount Type Surface
Series IPD
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 180A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports a maximum continuous drain current of 180 A.
  • Maximum drain-source voltage rating of 100 V.
  • Surface mount TO-252 package with 3 pins.
  • Maximum power dissipation of 81 W for robust thermal performance.
  • Maximum gate-source voltage rating of 20 V.
  • Very low on-resistance of 0.7 milliohm for efficient switching.
  • Typical gate charge at Vgs is 80 nanocoulombs enabling fast switching.
  • Operating temperature range from -55°C to 175°C.

Product Description

Infineon's IPD650P06NMATMA1 is a high-performance P-Channel MOSFET designed for discrete semiconductor applications requiring high current handling and voltage blocking capabilities. Packaged in a TO-252 surface mount format with 3 pins, this MOSFET supports a maximum continuous drain current (Id) of 180 amperes and a maximum drain-source voltage (Vds) of 100 volts. Its very low on-resistance (Rds(on)) of 0.7 milliohms facilitates minimal conduction losses and efficient power management.

The device operates effectively within a wide temperature range from -55°C to 175°C, making it suitable for use in automotive electronics, industrial machinery, power control, and other demanding environments. It features an enhancement mode channel with a maximum gate-source voltage (Vgs) rating of 20 V and a typical gate charge (Qg) of 80 nC, allowing rapid switching suitable for PWM and other control schemes.

Maximum power dissipation is rated at 81 W ensuring thermal robustness in operation. The MOSFET is fully RoHS compliant and meets AEC-Q101 automotive qualification standards, affirming its reliability and environmental compliance.

The IPD series MOSFETs finest OptiMOSTM technology offers Pb-free lead plating and halogen-free construction per IEC61249-2-21 standards. This enables environmentally safe manufacturing and disposal.

High continuous drain current of 180A for demanding power applications. 100 V max drain-source voltage with low Rds(on) of 0.7 milliohm. 3-pin TO-252 surface mount package suitable for automated PCB assembly. Wide operation temperature (-55°C to 175°C) for harsh industrial conditions.

Compatible with automotive electronics standards AEC-Q101 and RoHS compliant. Low forward voltage drop of 1 V improves efficiency. Typical gate charge of 80 nC enables fast switching response.

This MOSFET is ideal for use in power conversion, motor drivers, automotive ECU circuits, and industrial control systems. Its strong power handling combined with surface mounting capability facilitates compact, reliable designs.

Explore our Electronics & Electricals category for related semiconductors and discrete components to optimize your circuit designs on EnvMart.

Explore more products in our Power MOSFET category.

Infineon P-Channel MOSFET 180 A 100 V Surface Mount TO-252 Package IPD650P06NMATMA1
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Frequently Asked Questions

The maximum continuous drain current for the IPD650P06NMATMA1 is 180 A.

This model has a maximum drain-source voltage rating of 100 V.

It is packaged in a TO-252 surface mount format with 3 pins.

The operating temperature range is from -55°C to 175°C.

The maximum power dissipation is rated at 81 W.

The on-resistance (Rds(on)) is very low at 0.7 milliohm.

The typical gate charge at Vgs is 80 nanocoulombs (nC).

It complies with AEC-Q101 automotive qualification standards.

Yes, the IPD650P06NMATMA1 is fully RoHS compliant.

The maximum gate-source voltage rating is 20 V.

It is suitable for power conversion, motor drivers, automotive ECU circuits, and industrial control systems.

This model features a P-channel type.

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