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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPC50N04S5L5R5ATMA1 |
| Mount Type | Surface |
| Series | IPC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon IPC50N04S5L5R5ATMA1 is an N-Channel MOSFET designed for high current power switching in industrial, automotive, and demanding electronic environments. It supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 40 V, packed in a compact 8-pin SuperSO8 package measuring 5 x 6 mm for surface mounting.
This MOSFET features a low on-resistance of 1.4 milliohms, significantly reducing conduction losses and improving efficiency. It can dissipate up to 81 W, allowing it to handle sustained thermal loads with reliability. The device operates over a broad temperature range from -55°C up to 175°C, making it suitable for automotive and industrial applications exposed to harsh conditions.
The typical gate charge of 80 nC facilitates easier gate driving with standard drive circuits, while the maximum gate-source voltage rating of 20 V protects the device from voltage overstress. It complies with RoHS environmental standards and the automotive standard AEC-Q101, ensuring material and performance quality for critical applications.
Applications include automotive power distribution modules, high-current DC-DC converters, electric motor drive half-bridge legs, synchronous rectification in power supplies, and other surface-mounted power management assembly designs.
Delivers heavy-load switching with 100 A continuous drain current. Minimizes conduction losses with 1.4 mΩ Rds(on). 40 V drain-source voltage rated for low-voltage power rails. Supports 81 W power dissipation for thermal stability.
80 nC gate charge eases gate-drive requirements. 20 V maximum gate-source voltage for gate protection. Wide operating temperature from -55°C to 175°C. Meets RoHS and automotive AEC-Q101 standards. Compact 8-pin SuperSO8 5 x 6 mm surface-mount package.
Choose Infineon IPC50N04S5L5R5ATMA1 for demanding power switching needs in automotive, industrial, and power management applications. Explore more MOSFET devices and power semiconductors on EnvMart to support your engineering and manufacturing projects.
Explore more products in our Power MOSFET category.
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