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Infineon N-Channel MOSFET 100 A 40 V SuperSO8 5x6 mm Surface Mount IPC50N04S5L5R5ATMA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPC50N04S5L5R5ATMA1
Mount Type Surface
Series IPC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Delivers high continuous drain current of 100 A for heavy-load switching applications.
  • Features low 1.4 mΩ drain-source resistance to minimize conduction losses.
  • Supports a maximum drain-source voltage of 40 V suitable for low-voltage power rails.
  • Provides 81 W power dissipation for sustained thermal reliability.
  • Has a typical gate charge of 80 nC easing gate-drive requirements.
  • Maximum gate-source voltage is 20 V ensuring gate-voltage margin protection.
  • Operates in a wide temperature range from -55°C to 175°C for demanding environments.
  • RoHS compliant and meets automotive standard AEC-Q101.

Product Description

Infineon IPC50N04S5L5R5ATMA1 is an N-Channel MOSFET designed for high current power switching in industrial, automotive, and demanding electronic environments. It supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 40 V, packed in a compact 8-pin SuperSO8 package measuring 5 x 6 mm for surface mounting.

This MOSFET features a low on-resistance of 1.4 milliohms, significantly reducing conduction losses and improving efficiency. It can dissipate up to 81 W, allowing it to handle sustained thermal loads with reliability. The device operates over a broad temperature range from -55°C up to 175°C, making it suitable for automotive and industrial applications exposed to harsh conditions.

The typical gate charge of 80 nC facilitates easier gate driving with standard drive circuits, while the maximum gate-source voltage rating of 20 V protects the device from voltage overstress. It complies with RoHS environmental standards and the automotive standard AEC-Q101, ensuring material and performance quality for critical applications.

Applications include automotive power distribution modules, high-current DC-DC converters, electric motor drive half-bridge legs, synchronous rectification in power supplies, and other surface-mounted power management assembly designs.

Delivers heavy-load switching with 100 A continuous drain current. Minimizes conduction losses with 1.4 mΩ Rds(on). 40 V drain-source voltage rated for low-voltage power rails. Supports 81 W power dissipation for thermal stability.

80 nC gate charge eases gate-drive requirements. 20 V maximum gate-source voltage for gate protection. Wide operating temperature from -55°C to 175°C. Meets RoHS and automotive AEC-Q101 standards. Compact 8-pin SuperSO8 5 x 6 mm surface-mount package.

Choose Infineon IPC50N04S5L5R5ATMA1 for demanding power switching needs in automotive, industrial, and power management applications. Explore more MOSFET devices and power semiconductors on EnvMart to support your engineering and manufacturing projects.

Explore more products in our Power MOSFET category.

Infineon N-Channel MOSFET 100 A 40 V SuperSO8 5x6 mm Surface Mount IPC50N04S5L5R5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A, making it suitable for heavy-load switching applications.

This MOSFET supports a maximum drain-source voltage of 40 V, which is appropriate for low-voltage power rails.

It features a low on-resistance of 1.4 mΩ, which helps minimize conduction losses during operation.

The device can dissipate up to 81 W, allowing it to handle sustained thermal loads effectively.

The typical gate charge is 80 nC, which eases the gate-drive requirements.

The maximum gate-source voltage for this MOSFET is 20 V, providing gate-voltage margin protection.

It operates over a wide temperature range from -55°C to 175°C, suitable for demanding environments.

This model is packaged in an 8-pin SuperSO8 package measuring 5 x 6 mm for surface mounting.

It meets the automotive standard AEC-Q101, ensuring it is suitable for automotive applications.

Yes, this model is RoHS compliant, adhering to environmental standards.

It is suitable for applications such as automotive power distribution modules, high-current DC-DC converters, and synchronous rectification in power supplies.

The country of origin for this model is India.

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