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Infineon Power MOSFET N-Channel 381 A 40 V 8-Pin SuperSO8 Surface Mount BSC0904NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC0904NSIATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- OptiMOS technology integrated with monolithic Schottky-like diode for enhanced performance.
- Surface mount device in compact SuperSO8 5 x 6 mm package with 8 pins.
- Maximum continuous drain current of 381 amperes for heavy-duty applications.
- Low drain-source resistance of 0.7 milliohm for efficient conduction.
- Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
- Maximum gate-source voltage rating of ±20 volts for safe gate control.
- Typical gate charge of 80 nanocoulombs supports fast switching.
- Maximum power dissipation of 81 watts for robustness.
Product Description
The Infineon BSC0904NSIATMA1 is a high-performance N-Channel Power MOSFET specifically optimized for use in Buck converter circuits requiring high efficiency and thermal performance. Featuring Infineon's OptiMOS technology, this device integrates a monolithic Schottky-like diode to improve switching behavior and reduce losses.
Encapsulated in a surface mount SuperSO8 5 x 6 mm package with 8 pins, this MOSFET delivers a maximum continuous drain current of 381 A and withstands a maximum drain-source voltage of 40 V. It exhibits a low drain-source resistance of 0.7 mΩ, contributing to minimal conduction losses and high electrical efficiency.
Operating reliably in temperatures ranging from -55°C to 175°C, it suits applications with wide thermal demands. The gate-source voltage is rated at a maximum of ±20 V which ensures safe and effective gate drive control. The device has a typical gate charge of 80 nC, which supports rapid switching speeds necessary in modern power electronics.
This MOSFET handles power dissipation up to 81 W, making it suitable for demanding industrial, automotive (non-automotive certified), laboratory, and high-power commercial electronics applications. Moreover, it is Pb-free, RoHS compliant, and halogen-free done in compliance with IEC61249-2-22 standards.
OptiMOS power MOSFET with integrated monolithic Schottky-like diode for optimized switching performance. Compact SuperSO8 5 x 6 mm surface mount package with 8 pins for efficient PCB layout. 381 A maximum continuous drain current allows heavy load handling capability.
Low Rds(on) of 0.7 mΩ minimizes conduction losses in power circuits. Wide operating temperature range ensures reliable performance under harsh conditions. Safe gate driver operation with ±20 V gate-source voltage rating.
Fast switching supported by 80 nC gate charge. 81 W maximum power dissipation capability for industrial power applications. Environmentally compliant with Pb-free, RoHS, and halogen-free standards.
This Infineon MOSFET is ideal for industrial, laboratory, construction, manufacturing, and commercial power electronics equipment and systems requiring efficient and reliable power switching devices. Explore further Power MOSFETs from Infineon and related semiconductor products on EnvMart for optimized solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381 amperes, making it suitable for heavy-duty applications.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
It exhibits a low drain-source resistance of 0.7 milliohm, which minimizes conduction losses.
The operating temperature range for this MOSFET is from -55°C to 175°C, ensuring reliability in harsh environments.
The typical gate charge is 80 nanocoulombs, which supports fast switching speeds.
It can handle a maximum power dissipation of 81 watts, making it suitable for demanding applications.
This model is encapsulated in a SuperSO8 5 x 6 mm surface mount package with 8 pins.
It is RoHS compliant and meets IEC61249-2-22 standards, ensuring environmental safety.
The maximum gate-source voltage rating is ±20 volts, which ensures safe gate control.
This unit is suitable for industrial, laboratory, construction, manufacturing, and commercial power electronics applications.
The channel type of this MOSFET is N-channel, optimized for high efficiency and thermal performance.
The country of origin for this model is India.
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