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Nexperia Type P-Channel MOSFET 30.6 A 12 V Enhancement 8-Pin MLPAK33 PXP3R7-12QUJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP3R7-12QUJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 30.6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features trench MOSFET technology ensuring low threshold voltage and high efficiency.
- Designed for use as high-side load switch and in battery management applications.
- Maximum power dissipation rated at 81W for robust thermal performance.
- Operates effectively in temperature ranges from -55°C to 175°C.
- Maximum gate-source voltage is 20 V for reliable switching operations.
- Compact MLPAK33 surface-mount package with 8 pins for versatile PCB integration.
- Low drain-source resistance of 13.6 milliohms for minimized conduction losses.
- Ideal for DC-to-DC converters and various switching circuit applications.
Product Description
Nexperia PXP3R7-12QUJ Type P-Channel MOSFET is a surface-mounted, trench MOSFET transistor housed in an MLPAK33 package with 8 pins. It is engineered for high-efficiency operation in electronic circuits requiring a P-channel device with enhancement mode.
This MOSFET supports a maximum continuous drain current of 30.6 A and has a drain-source voltage rating of 12 V, offering robust performance under demanding load conditions. The device operates from -55°C to 175°C, enabling reliable use in a wide range of industrial and commercial applications.
The transistor’s low gate threshold voltage and 13.6 milliohm drain-source resistance reduce power loss, optimizing circuit energy efficiency. The maximum gate-source voltage of 20 V ensures safe switching without damage to the device.
Applications include high-side load switching, battery management systems, DC-to-DC converters, and various switching circuits in industrial, manufacturing, electronic device prototyping, and commercial products.
Features trench MOSFET technology for efficient switching and low losses. Compact MLPAK33 surface mount package provides easy integration onto circuit boards. High power dissipation rating of 81 W supports demanding power applications.
Wide operating temperature range suitable for harsh industrial environments. Low drain-source resistance ensures efficient conductance. 8-pin design facilitates multiple circuit configurations. Designed for enhancement mode operation to provide robust control.
Suitable for use in automotive electronics and power management circuits. Complies with environmental standards but lacks specific automotive standard certification.
This MOSFET is ideal for designers and engineers working on power management, switching power supplies, DC-DC converter modules, and electronic device manufacturing. It offers a reliable and efficient solution for high-current, low-voltage applications and is widely used across industrial, commercial, and manufacturing sectors.
EnvMart offers this component with verified quality and detailed specifications for professional electronics assembly and design projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30.6 A.
This MOSFET has a maximum drain-source voltage rating of 12 V.
It operates effectively in temperature ranges from -55°C to 175°C.
The maximum power dissipation rated for this model is 81 W.
The maximum gate-source voltage for reliable switching operations is 20 V.
It features a low drain-source resistance of 13.6 milliohms.
This model is housed in a compact MLPAK33 surface-mount package with 8 pins.
It is designed for high-side load switching, battery management systems, and DC-to-DC converters.
This device is a type P-channel MOSFET with enhancement mode operation.
Key features include trench MOSFET technology for low threshold voltage and high efficiency, making it suitable for various switching circuit applications.
Yes, it is suitable for automotive electronics and power management circuits, though it lacks specific automotive standard certification.
The country of origin for this MOSFET is India.
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