Infineon iPB Series N-Channel MOSFET 273 A, 100 V, 3-Pin TO-263 Surface Mount IPB048N15N5ATMA1

Infineon IPB048N15N5ATMA1 is a high-performance N-Channel MOSFET from the iPB series designed to deliver efficient power switching with a maximum continuous drain current of 273 A and a drain-source voltage rating of 100 V. Packaged in a 3-pin TO-263 surface-mount format, this device offers a compact solution for high-power applications requiring reliable conduction and thermal robustness.

The MOSFET exhibits a low maximum drain-source resistance (Rds(on)) of 1.7 mΩ, significantly reducing conduction losses and improving overall circuit efficiency. It supports a maximum power dissipation of 81 W, ensuring sustained operation under demanding thermal conditions. The device can reliably operate across a large temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.

The typical gate charge of 80 nC at the gate-to-source voltage level balances switching speed with drive power requirements, and the gate-source voltage rating of 20 V allows substantial control margin in gate drive circuits. The TO-263 package provides an effective thermal path to the PCB, enhancing heat dissipation in tightly-packed layouts.

This MOSFET is ideally suited for power-conversion stages in industrial inverter systems and high-current motor-drive circuits on printed circuit boards. It is also useful in synchronous-rectification topologies within power supplies and battery management systems where high current and thermal performance are critical. While it complies with RoHS directives for environmental safety, it is not qualified for automotive applications.

Designed for surface-mount applications, the IPB048N15N5ATMA1 offers a balanced combination of performance, robustness, and compact footprint suitable for industrial, manufacturing, and commercial electronics use cases.

Supports high current loads with 273 A maximum continuous drain current. 100 V maximum drain-source voltage ensures reliable switching performance. Low Rds(on) of 1.7 mΩ reduces conduction losses. Wide operating temperature range from -55°C to 175°C allows harsh environment usage.

81 W maximum power dissipation supports sustained thermal loading. Typical gate charge of 80 nC balances speed and drive requirements. 20 V maximum gate-source voltage provides driver margin. TO-263 surface mount package enhances thermal management.

Suitable for industrial, HVAC, motor drives, power supply units, and battery management systems. Explore EnvMart's extensive catalog of semiconductor components for high-quality industrial electronics solutions.