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Infineon BSC N-Channel MOSFET 381 A 40 V 8-Pin TDSON Surface Mount Power Switching Device BSC110N15NS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC110N15NS5ATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature +150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Features a low 0.7 milliohm drain-source resistance to reduce conduction losses.
  • Supports maximum continuous drain current of 381 A for heavy current load applications.
  • Operates with a maximum power dissipation of 81 W for sustained thermal performance.
  • Utilizes an 8-pin TDSON surface mount package for compact assembly.
  • Wide operating temperature range from -55°C to +150°C for industrial environments.
  • Typical gate charge of 80 nC allows optimized gate drive with low switching losses.
  • Maximum gate-source voltage tolerance of 20 V ensures robust drive margins.
  • RoHS compliant and suitable for power conversion and DC motor control applications.

Product Description

Infineon BSC110N15NS5ATMA1 N-Channel MOSFET is engineered for high-current surface mount power switching in demanding thermal and electrical environments. It features a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, making it ideal for applications requiring efficient conduction and thermal management.

This device is housed in an 8-pin TDSON package optimized for surface mount technology, enabling compact design in power electronics modules. The MOSFET's low on-resistance of 0.7 milliohm reduces conduction losses, which is beneficial in high-efficiency synchronous buck power stages and server power distribution modules.

Designed to operate over a wide temperature range from -55°C to +150°C, this MOSFET suits industrial applications that demand reliable operation in varying conditions. Its typical gate charge of 80 nC results in predictable gate-drive performance, aiding in EMI control and switching efficiency.

The device's maximum gate-source voltage of 20 V supports robust drive margins, ensuring reliable switching and power management. It complies with RoHS regulations, confirming the restriction of hazardous substances for environmentally conscious manufacturing.

This power MOSFET is applicable in high-current DC motor controllers, synchronous buck power stages, server power distribution, battery management systems, and industrial drive electronics requiring stable performance under continuous loads.

Features a low 0.7 milliohm drain-source resistance to reduce conduction losses. Supports maximum continuous drain current of 381 A for heavy current load applications. Operates with a maximum power dissipation of 81 W for sustained thermal performance.

Utilizes an 8-pin TDSON surface mount package for compact assembly. Wide operating temperature range from -55°C to +150°C for industrial environments. Typical gate charge of 80 nC allows optimized gate drive with low switching losses.

Maximum gate-source voltage tolerance of 20 V ensures robust drive margins. RoHS compliant and suitable for power conversion and DC motor control applications. Explore the range of Infineon MOSFETs and related semiconductor components available on EnvMart for industrial, automotive, and manufacturing power applications.

Infineon BSC N-Channel MOSFET 381 A 40 V 8-Pin TDSON Surface Mount Power Switching Device BSC110N15NS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 A, making it suitable for heavy current load applications.

This N-Channel MOSFET has a maximum drain-source voltage rating of 40 V.

It operates with a maximum power dissipation of 81 W, ensuring sustained thermal performance during operation.

The typical gate charge for this model is 80 nC, which helps optimize gate drive with low switching losses.

This device utilizes an 8-pin TDSON surface mount package, allowing for compact assembly in power electronics.

It operates over a wide temperature range from -55°C to +150°C, suitable for industrial environments.

The drain-source resistance is low at 0.7 milliohm, which reduces conduction losses during operation.

This MOSFET has a maximum gate-source voltage tolerance of 20 V, providing robust drive margins.

Yes, this model is RoHS compliant, confirming it meets the restriction of hazardous substances for environmentally conscious manufacturing.

It is suitable for applications including high-current DC motor controllers, synchronous buck power stages, and battery management systems.

This device has 8 pins, which is typical for its TDSON package type.

The forward voltage for this model is 1.2 V, which is relevant for its operation in various circuits.

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