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Infineon iPB N-Channel MOSFET, 273A, 100V, 3-Pin TO-263, Surface Mount IPB60R070CFD7ATMA1
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Infineon |
| Model | IPB60R070CFD7ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high power SMPS applications including servers, telecom, and EV charging stations.
- Features ultra-fast body diode enabling efficient switching.
- Best-in-class low reverse recovery charge reduces power loss.
- Improved turn-off behavior and robust thermal endurance up to 175°C.
- Complies with RoHS and automotive standard AEC-Q101.
- Low RDS(on) of 1.7 milliohms for minimal conduction loss.
- Typical gate charge of 80 nanocoulombs at 10V gate drive.
- Operates reliably from -55°C up to 175°C ambient temperature.
Product Description
Infineon IPB60R070CFD7ATMA1 is a high-performance N-Channel MOSFET designed for demanding power switching applications requiring 273A continuous current and 100V drain-source voltage within a TO-263 3-pin surface mount package.
Its advanced Super Junction technology enables low on-resistance and reduced switching losses, making it ideal for resonant topologies commonly used in server power supplies, telecommunications equipment, and electric vehicle charging stations.
The MOSFET features an ultra-fast intrinsic body diode with excellent reverse recovery characteristics, contributing to high efficiency and reduced electromagnetic interference during operation.
With a maximum power dissipation of 81W and maximum operating junction temperature of 175°C, it ensures reliable operation in harsh industrial environments and supports thermal ruggedness for hard commutation conditions.
Its robust design also complies with RoHS environmental standards and the automotive-grade AEC-Q101, allowing use in automotive power electronics and other critical applications. Designed for resonant high-power SMPS applications with superior efficiency.
Ultra-fast body diode with low reverse recovery charge and ruggedness. Low RDS(on) of 1.7mΩ minimizes conduction losses. Wide operating temperature range from -55°C to 175°C. Surface mount TO-263 package with 3 pins enables easy PCB integration.
Meets RoHS and AEC-Q101 automotive standards for quality and reliability. This MOSFET is optimal for industrial, telecommunications, automotive, laboratory, and manufacturing equipment requiring efficient, high-current switching devices.
Explore further Infineon semiconductor solutions and electronic components on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The Infineon IPB60R070CFD7ATMA1 has a maximum continuous drain current of 273A.
This model supports a maximum drain-source voltage of 100V.
The maximum drain-source resistance (RDS(on)) is 1.7 milliohms, which minimizes conduction losses.
The typical gate charge for this unit is 80 nanocoulombs at a 10V gate drive.
It operates reliably within a temperature range of -55°C to 175°C.
The Infineon IPB60R070CFD7ATMA1 is packaged in a TO-263 surface mount configuration with 3 pins.
The maximum power dissipation for this MOSFET is 81W.
Yes, it complies with the automotive standard AEC-Q101, making it suitable for automotive applications.
It meets RoHS environmental standards, ensuring compliance for various applications.
The forward voltage (Vf) for this unit is 1.2V.
It is designed for high power SMPS applications, including servers, telecommunications, and electric vehicle charging stations.
This model features an N-channel configuration, suitable for various power switching applications.
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