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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC070N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon BSC070N10LS5ATMA1 is a high-current N-Channel MOSFET designed for advanced power conversion and switching tasks in electronic and industrial applications. Packaged in an 8-pin TDSON format, it is intended for surface-mount mounting on printed circuit boards.
This MOSFET delivers very low on-resistance (0.7 mΩ), enabling efficient conduction with minimal losses, which is critical for high-current power applications. The device supports a maximum power dissipation of 81 W, allowing it to sustain heavy loads while maintaining thermal stability. It features a forward voltage drop of 1.1 V to minimize voltage losses during conduction.
Designed to perform in demanding thermal environments, the device operates over a wide temperature range from -55°C to +150°C. It includes a typical gate charge of 80 nC, which helps balance switching speed and driver power consumption. The maximum gate-source voltage rating of 20 V provides adequate headroom for robust gate drive margins.
The MOSFET is RoHS compliant and ideal for various industrial, electronic, and power management applications such as high-current motor drive stages, synchronous rectification in power supplies, battery management in high-discharge systems, DC-DC conversion in server power rails, and high-power class-D audio output stages.
The 8-pin TDSON package facilitates surface mounting in compact electronic assemblies, making this component suitable for high-density designs requiring efficient thermal and electrical performance.
Maximum continuous drain current of 381 amps allows heavy-load switching. Low drain-source resistance of 0.7 milliohms reduces conduction power losses. Maximum power dissipation of 81 watts supports sustained operation under load.
Forward voltage drop of 1.1 volts minimizes voltage loss during conduction. Typical gate charge of 80 nanocoulombs balances drive energy and switching speed. Maximum gate-source voltage rating of 20 volts ensures robust gate control.
Wide operating temperature range from -55°C to +150°C for reliability in harsh environments. RoHS compliant for environmentally safe electronic design.
This Infineon MOSFET is a reliable choice for industrial electronics, power management, and manufacturing applications requiring high current handling with efficient switching performance. Explore our Electronics & Electricals category for more Infineon semiconductor products on EnvMart.
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