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Infineon iPB N-Channel MOSFET 273 A 100 V Enhancement Mode Surface Mount TO-263 Package IPB120N10S405ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB120N10S405ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement mode MOSFET supports surface mount technology.
- It features a low maximum drain source resistance of 1.7 milliohms for efficient switching.
- Designed for high power dissipation up to 81 W ensuring reliable operation.
- Operates within a temperature range of -55°C to 175°C.
- Supports a maximum gate source voltage of 20 V and typical gate charge of 80 nC.
- Forward voltage is 1.2 V ensuring low conduction losses.
- Complies with RoHS standards and AEC-Q101 automotive qualification.
Product Description
Infineon IPB120N10S405ATMA1 is a high performance N-Channel MOSFET designed for demanding electronic applications, packaged in a TO-263 surface mount format. It supports a maximum continuous drain current of 273 amperes and a maximum drain-source voltage of 100 volts, making it suitable for power management in industrial, automotive, and telecommunications electronics.
This enhancement mode MOSFET features a very low on-resistance of 1.7 milliohms, which allows efficient power switching and reduces thermal losses. The device supports up to 81 watts of power dissipation and can operate reliably in a wide temperature range from -55°C to 175°C, ensuring durability in harsh environments.
Its maximum gate-source voltage is 20 volts, with a typical gate charge of 80 nanocoulombs that enables fast switching speeds. The forward voltage of 1.2 volts contributes to overall efficiency gains in electronic circuits.
With compliance to RoHS directives and automotive grade AEC-Q101 standard, this MOSFET is ideal for applications including server power supplies, telecom infrastructure, electric vehicle charging stations, and other high-reliability systems requiring efficient power conversion and control.
This device is designed for surface mount applications leveraging the TO-263 package. Maximum continuous drain current: 273 A. Maximum drain-source voltage: 100 V. Low on-resistance of 1.7 mΩ for improved efficiency. High maximum operating temperature of 175°C for robustness.
Compatible with RoHS and automotive AEC-Q101 standards. Explore more products in the MOSFET category for various semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 273 amperes.
It can handle a maximum drain-source voltage of 100 volts.
The on-resistance is 1.7 milliohms, which contributes to efficient power switching.
This model supports a maximum power dissipation of 81 watts.
It operates within a temperature range of -55°C to 175°C.
The typical gate charge is 80 nanocoulombs.
The maximum gate-source voltage is 20 volts.
It is packaged in a TO-263 surface mount format.
It complies with the AEC-Q101 automotive standard.
This device complies with RoHS standards.
This MOSFET has a pin count of 3.
It features an N-channel type configuration.
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