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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC430N25NSFDATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
The Infineon BSC430N25NSFDATMA1 N-Channel MOSFET is an OptiMOS power transistor engineered primarily for automotive applications, utilizing advanced technology to deliver superior performance. It is tailored for high-frequency switching and synchronous rectification in power management circuits.
This MOSFET supports a maximum continuous drain current of 381 amperes and withstands a maximum drain source voltage of 30 volts, optimizing it for high-current, low-voltage applications. The low on-resistance of 0.7 milliohms considerably reduces power losses and heat generation during operation.
Packaged in an 8-pin SuperSO8 surface mount form factor measuring 5 x 6 mm, the device is suitable for compact and space-constrained printed circuit boards. It features a typical gate charge of 80 nanocoulombs at the gate-source voltage threshold, facilitating rapid switching speeds which are essential for efficient power conversion.
The MOSFET can dissipate up to 81 watts of power and is rated for operation across a wide temperature range from -55°C up to 175°C, ensuring reliable performance under rigorous environmental conditions commonly found in automotive and industrial systems.
This product is compliant with RoHS directives and is lead-free, minimizing environmental impact. Although it lacks formal automotive certification, the Infineon BSC430N25NSFDATMA1 is designed to meet the demanding requirements of automotive power electronics.
Maximum continuous drain current: 381 A. Maximum drain source voltage: 30 V. Low drain source resistance (Rds(on)): 0.7 mΩ. 8-Pin SuperSO8 (5 x 6 mm) package for surface mounting. Typical gate charge: 80 nC to support fast switching.
Power dissipation rating: 81 W. Operating temperature range: -55°C to 175°C. Forward voltage: 1 V for low conduction loss. RoHS compliant and lead-free to meet environmental standards. Optimized for high-frequency switching in automotive power systems.
This Infineon MOSFET is ideal for use in industrial, automotive, and power management applications where high current carrying capability, efficiency, and reliability are critical. It is suitable for projects requiring surface mount components with compact form factor and robust electrical performance.
Explore EnvMart's wide selection of semiconductors and discrete components to find compatible parts for circuit prototyping, industrial manufacturing, and automotive electronics design.
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