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Infineon N-Channel MOSFET 381 A, 30 V, 8-Pin SuperSO8 Surface Mount Power Transistor BSC430N25NSFDATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC430N25NSFDATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Handles a maximum continuous drain current of 381 A for powerful conduction.
  • Operates at a maximum drain source voltage of 30 V ensuring robustness in circuits.
  • Features a low maximum drain source resistance of 0.7 milliohms for efficient switching.
  • Equipped with an 8-pin SuperSO8 (5 x 6 mm) surface mount package for compact PCB integration.
  • Supports typical gate charge of 80 nC enabling fast switching speeds.
  • Maximum power dissipation rating of 81 W for handling high power loads.
  • Designed to operate reliably in a temperature range of -55°C to 175°C for harsh environments.
  • Forward voltage of 1 V to minimize conduction losses.

Product Description

The Infineon BSC430N25NSFDATMA1 N-Channel MOSFET is an OptiMOS power transistor engineered primarily for automotive applications, utilizing advanced technology to deliver superior performance. It is tailored for high-frequency switching and synchronous rectification in power management circuits.

This MOSFET supports a maximum continuous drain current of 381 amperes and withstands a maximum drain source voltage of 30 volts, optimizing it for high-current, low-voltage applications. The low on-resistance of 0.7 milliohms considerably reduces power losses and heat generation during operation.

Packaged in an 8-pin SuperSO8 surface mount form factor measuring 5 x 6 mm, the device is suitable for compact and space-constrained printed circuit boards. It features a typical gate charge of 80 nanocoulombs at the gate-source voltage threshold, facilitating rapid switching speeds which are essential for efficient power conversion.

The MOSFET can dissipate up to 81 watts of power and is rated for operation across a wide temperature range from -55°C up to 175°C, ensuring reliable performance under rigorous environmental conditions commonly found in automotive and industrial systems.

This product is compliant with RoHS directives and is lead-free, minimizing environmental impact. Although it lacks formal automotive certification, the Infineon BSC430N25NSFDATMA1 is designed to meet the demanding requirements of automotive power electronics.

Maximum continuous drain current: 381 A. Maximum drain source voltage: 30 V. Low drain source resistance (Rds(on)): 0.7 mΩ. 8-Pin SuperSO8 (5 x 6 mm) package for surface mounting. Typical gate charge: 80 nC to support fast switching.

Power dissipation rating: 81 W. Operating temperature range: -55°C to 175°C. Forward voltage: 1 V for low conduction loss. RoHS compliant and lead-free to meet environmental standards. Optimized for high-frequency switching in automotive power systems.

This Infineon MOSFET is ideal for use in industrial, automotive, and power management applications where high current carrying capability, efficiency, and reliability are critical. It is suitable for projects requiring surface mount components with compact form factor and robust electrical performance.

Explore EnvMart's wide selection of semiconductors and discrete components to find compatible parts for circuit prototyping, industrial manufacturing, and automotive electronics design.

Infineon N-Channel MOSFET 381 A, 30 V, 8-Pin SuperSO8 Surface Mount Power Transistor BSC430N25NSFDATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 381 A, making it suitable for high-current applications.

This MOSFET can withstand a maximum drain source voltage of 30 V, ensuring its robustness in various circuits.

It features a low maximum drain source resistance of 0.7 milliohms, which helps in reducing power losses during operation.

The device is packaged in an 8-pin SuperSO8 surface mount package, measuring 5 x 6 mm, suitable for compact PCB integration.

The typical gate charge is 80 nanocoulombs, facilitating fast switching speeds essential for efficient power management.

It has a maximum power dissipation rating of 81 W, allowing it to handle high power loads effectively.

This model operates reliably in a temperature range from -55°C to 175°C, making it suitable for harsh environments.

Yes, it is RoHS compliant and lead-free, minimizing its environmental impact.

The forward voltage is 1 V, which helps to minimize conduction losses during operation.

It is optimized for high-frequency switching and synchronous rectification in automotive power management circuits.

The maximum gate source voltage for this model is 20 V, ensuring compatibility with various control circuits.

This device is an N-channel MOSFET, which is suitable for various power management applications.

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