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Infineon iPB N-Channel MOSFET 273 A 100 V Enhancement 3-Pin TO-263 IPB120N10S405ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB120N10S405ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High continuous drain current rating of 273 amperes.
- Maximum drain-source voltage of 100 volts ensures robust operation.
- Compact TO-263 package with 3 pins for surface mounting.
- Low drain-source resistance of 1.7 milliohms for efficient conduction.
- Capable of dissipating up to 81 watts of power.
- Typical gate charge of 80 nanocoulombs at gate-source voltage of 10 V.
- Wide operating temperature range from -55 °C to 175 °C.
- Automotive-grade AEC-Q101 qualification enhances reliability.
Product Description
Infineon IPB120N10S405ATMA1 is a high-performance N-Channel MOSFET designed for power management applications. Packaged in a TO-263 (D2PAK) surface-mount case with three pins, it offers a maximum continuous drain current of 273 amperes and a drain-source voltage rating of 100 volts, making it suitable for demanding industrial and automotive uses.
This enhancement mode MOSFET features an ultra-low drain-source resistance of 1.7 milliohms, enabling high efficiency in switching applications such as server power supplies, telecommunications equipment, and electric vehicle charging stations. The device can dissipate up to 81 watts of power and operates reliably across an extended temperature range from -55 °C to 175 °C.
Typical gate charge is 80 nanocoulombs at a 10 V gate-source voltage, ensuring fast switching speeds and improved performance in resonant topologies. The IPB120N10S405ATMA1 is AEC-Q101 qualified, attesting to its quality and robustness for automotive applications. It meets RoHS standards for environmental compliance.
Maximum continuous drain current: 273 A. Drain-source voltage: 100 V. Drive mode: Enhancement type. Package: TO-263 with 3 pins for surface mount technology. Drain-source resistance: 1.7 mΩ for low conduction loss. Power dissipation capacity: 81 W.
Gate charge: 80 nC at Vgs=10 V. Operating temperature: -55 °C to 175 °C. Automotive grade: AEC-Q101 certified. RoHS compliant for environmental safety.
This MOSFET is ideal for industrial, automotive, telecommunications, and energy-efficient power supply applications. Its robust design ensures reliability under harsh environmental conditions while maintaining high electrical performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 273 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
It is packaged in a TO-263 (D2PAK) surface-mount case with three pins.
The drain-source resistance is 1.7 milliohms, which enables efficient conduction.
This MOSFET can dissipate up to 81 watts of power.
The typical gate charge is 80 nanocoulombs at a gate-source voltage of 10 V.
It operates reliably across an extended temperature range from -55 °C to 175 °C.
It is AEC-Q101 qualified, enhancing its reliability for automotive applications.
Yes, this MOSFET meets RoHS standards for environmental compliance.
It features an N-channel type, designed for enhancement mode operation.
The maximum gate-source voltage for this model is 20 volts.
This MOSFET is suitable for industrial, automotive, telecommunications, and energy-efficient power supply applications.
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