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Infineon N-Channel MOSFET 40 V 381 A 81 W, 8-Pin TDSON BSC110N15NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC110N15NS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Offers low conduction losses with 0.7 mΩ maximum drain-source resistance.
- Supports power dissipation up to 81 W for sustained thermal performance.
- Operates over a wide temperature range from -55°C to +150°C.
- Equipped with an 8-pin TDSON surface-mount package.
- Typical gate charge of 80 nC allows for predictable gate-drive design.
- Maximum gate-source voltage is 20 V supporting robust drive margins.
- Forward voltage of 1.2 V for efficient conduction.
- Compliant with RoHS environmental standards.
Product Description
Infineon BSC110N15NS5ATMA1 is a high-current N-channel MOSFET offering excellent performance for power switching applications. It supports a maximum continuous drain current of 381 A and withstands drain-source voltages up to 40 V. The device features a low maximum on-resistance of 0.7 mΩ, providing efficient conduction and minimal power loss during switching operations.
It comes in an 8-pin TDSON surface-mount package, optimized for compact industrial electronics assembly. Operating temperatures range from -55°C to +150°C, making it suitable for demanding thermal environments in industrial and commercial equipment.
The MOSFET’s typical gate charge of 80 nC ensures predictable gate-drive behavior, helping engineers optimize switching speed while minimizing electromagnetic interference. Its maximum gate-source voltage rating of 20 V provides robust drive margin for reliable operation.
With a maximum power dissipation rating of 81 W, this device can handle sustained thermal loading in applications such as high-current DC motor controllers, synchronous buck power regulators, server power modules, battery management systems, and industrial drive electronics.
Low Rds(on) of 0.7 mΩ reduces conduction losses for efficient switching. Supports continuous drain current of 381 A for heavy current loads. Drain-source voltage maximum rated at 40 V for moderate voltage power rail applications.
Maximum power dissipation of 81 W for sustained operation. Typical gate charge of 80 nC allows precise gate-drive design. Maximum gate-source voltage is 20 V ensuring drive robustness. Forward voltage of 1.2 V for efficient conduction.
Wide operating temperature range from -55°C to +150°C supports industrial use cases. RoHS compliant environmental certification.
Infineon BSC110N15NS5ATMA1 is ideal for use in industrial drive electronics, power conversion modules, server power supplies, and DC motor control applications requiring high current capacity and reliability across wide temperature ranges. Engineers seeking a high-performance N-channel MOSFET will find this product a versatile and robust choice.
Explore more semiconductor and MOSFET solutions in EnvMart’s Electronics & Electricals category for enhanced industrial and commercial power management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A, making it suitable for heavy current loads.
This unit has a maximum drain-source voltage rating of 40 V, suitable for moderate voltage power rail applications.
It supports a maximum power dissipation of 81 W, allowing for sustained thermal performance in various applications.
The maximum on-resistance is 0.7 mΩ, which helps in reducing conduction losses during operation.
The typical gate charge is 80 nC, which aids in achieving predictable gate-drive behavior.
The maximum gate-source voltage for this device is 20 V, providing robust drive margins for reliable operation.
It operates over a wide temperature range from -55°C to +150°C, suitable for demanding environments.
This model is packaged in an 8-pin TDSON surface-mount configuration, optimized for compact assembly.
Yes, this device is compliant with RoHS environmental standards, ensuring it meets regulatory requirements.
It is ideal for applications such as high-current DC motor controllers, synchronous buck power regulators, and industrial drive electronics.
The MOSFET features a pin count of 8, which is standard for its package type.
The forward voltage is 1.2 V, contributing to efficient conduction during operation.
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