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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE006NE2LM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 730mV |
Infineon IQE006NE2LM5ATMA1 is an advanced OptiMOS 5 N-Channel MOSFET designed for industrial and automotive applications requiring high current with low conduction losses. It features a maximum continuous drain current of 253A and a maximum drain-source voltage rating of 30V, making it ideal for power switching in low-voltage circuits. The device uses an 8-pin PQFN package designed for surface mount technology, enabling compact PCB designs and excellent thermal performance.
This MOSFET has a very low maximum drain-source resistance of 1.2 milliohms, which minimizes power dissipation during conduction and increases efficiency. Additionally, it supports a typical gate charge of 80 nanocoulombs, allowing rapid switching and reducing switching losses. The maximum power dissipation is rated at 81 watts, enabling it to handle high-power loads safely.
The operating temperature range extends from -55°C to 175°C, ensuring reliable operation in harsh environments for industrial, automotive, and power management applications. The product is fully compliant with RoHS standards and meets the automotive qualification standard AEC-Q101, signifying robust quality and reliability.
Maximum continuous drain current of 253A supports high power applications. Low Rds(on) at 1.2 mΩ reduces conduction losses. 8-pin PQFN package suitable for surface mount PCB assembly. Typical gate charge of 80 nC allows fast switching performance.
Maximum power dissipation of 81 W ensures thermal reliability. Wide operating temperature range from -55°C to 175°C. RoHS compliant and meets automotive standard AEC-Q101.
This MOSFET is suitable for use in industrial control systems, power supplies, automotive electronics, and other demanding environments requiring efficient switching and thermal management. Its compact PQFN packaging facilitates integration into modern PCB layouts. Environmentally friendly compliance and automotive quality make it a reliable choice for various industrial and electronic designs.
Explore the comprehensive range of Infineon semiconductor devices for advanced power management solutions at EnvMart.
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