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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC010N04LS6ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
The Infineon BSC010N04LS6ATMA1 is a high-current N-Channel MOSFET designed for demanding power electronics applications. With a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, this device offers robust switching capability for power systems.
Housed in a SuperSO8 5 x 6 surface-mount package with 8 pins, it enables compact circuit layouts while maintaining excellent electrical performance. The device features a low on-resistance of 0.7 milliohms which significantly minimizes conduction losses during high load operation, thereby increasing system efficiency.
This MOSFET supports a maximum power dissipation of 81 W and operates reliably in a wide temperature range from -55°C up to 175°C, suitable for use in industrial and automotive environments requiring high thermal stability.
The typical gate charge of 80 nC reduces switching stress and losses on gate drivers, enhancing the overall efficiency of power conversions. The gate-source voltage must not exceed 20 V to prevent damage.
Applications include high-current DC-DC converters, motor-drive stages, power-distribution modules, synchronous rectification in power supplies, and load switching in harsh environments. Its surface-mount SuperSO8 packaging facilitates easy integration in modern electronic assemblies.
The MOSFET delivers sustained high-load current capacity of 381 A. Medium-voltage switching with a 40 V drain-source rating. Minimized conduction losses due to 0.7 mΩ on-resistance. Supports elevated power dissipation of 81 W.
Wide operating temperature range from -55°C to 175°C. Low typical gate charge reduces switching losses. Compact 8-pin SuperSO8 surface mount package. RoHS compliant manufacturing.
This Infineon MOSFET is ideal for industrial, automotive, manufacturing, and power management applications requiring efficient, high-current switching devices. Explore more semiconductor solutions and power devices in the Infineon category on EnvMart.
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