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Infineon BSC0 Series N-Channel MOSFET 40 V, 381 A, 8-Pin SuperSO8 5x6 Surface Mount BSC010N04LS6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC010N04LS6ATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • The MOSFET features a maximum continuous drain current of 381 A for heavy-load performance.
  • It supports a maximum drain-source voltage of 40 V suitable for medium-voltage power switching.
  • Low on-resistance of 0.7 mΩ reduces conduction losses under heavy current conditions.
  • Maximum power dissipation rating of 81 W accommodates elevated power throughput.
  • Operational temperature range from -55°C to 175°C enables use in harsh temperature environments.
  • Typical gate charge of 80 nC reduces switching losses for improved driver efficiency.
  • SuperSO8 5 x 6 package offers compact surface mount configuration suitable for modern PCB designs.
  • Maximum gate-source voltage of 20 V must be observed to prevent gate damage.

Product Description

The Infineon BSC010N04LS6ATMA1 is a high-current N-Channel MOSFET designed for demanding power electronics applications. With a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, this device offers robust switching capability for power systems.

Housed in a SuperSO8 5 x 6 surface-mount package with 8 pins, it enables compact circuit layouts while maintaining excellent electrical performance. The device features a low on-resistance of 0.7 milliohms which significantly minimizes conduction losses during high load operation, thereby increasing system efficiency.

This MOSFET supports a maximum power dissipation of 81 W and operates reliably in a wide temperature range from -55°C up to 175°C, suitable for use in industrial and automotive environments requiring high thermal stability.

The typical gate charge of 80 nC reduces switching stress and losses on gate drivers, enhancing the overall efficiency of power conversions. The gate-source voltage must not exceed 20 V to prevent damage.

Applications include high-current DC-DC converters, motor-drive stages, power-distribution modules, synchronous rectification in power supplies, and load switching in harsh environments. Its surface-mount SuperSO8 packaging facilitates easy integration in modern electronic assemblies.

The MOSFET delivers sustained high-load current capacity of 381 A. Medium-voltage switching with a 40 V drain-source rating. Minimized conduction losses due to 0.7 mΩ on-resistance. Supports elevated power dissipation of 81 W.

Wide operating temperature range from -55°C to 175°C. Low typical gate charge reduces switching losses. Compact 8-pin SuperSO8 surface mount package. RoHS compliant manufacturing.

This Infineon MOSFET is ideal for industrial, automotive, manufacturing, and power management applications requiring efficient, high-current switching devices. Explore more semiconductor solutions and power devices in the Infineon category on EnvMart.

Infineon BSC0 Series N-Channel MOSFET 40 V, 381 A, 8-Pin SuperSO8 5x6 Surface Mount BSC010N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon BSC010N04LS6ATMA1 is 381 A, suitable for heavy-load performance.

This model has a maximum drain-source voltage rating of 40 V, making it suitable for medium-voltage power switching applications.

It features a low on-resistance of 0.7 mΩ, which helps to reduce conduction losses under heavy current conditions.

The maximum power dissipation rating for this unit is 81 W, accommodating elevated power throughput.

The operational temperature range is from -55°C to 175°C, allowing for use in harsh temperature environments.

The typical gate charge is 80 nC, which reduces switching losses and improves driver efficiency.

It is housed in a SuperSO8 5 x 6 surface-mount package, which is compact and suitable for modern PCB designs.

The maximum gate-source voltage that must be observed is 20 V to prevent gate damage.

This model has 8 pins, facilitating its integration into electronic assemblies.

It is suitable for applications such as high-current DC-DC converters, motor-drive stages, and load switching in harsh environments.

The device complies with RoHS standards, ensuring it meets environmental regulations.

The forward voltage for this model is 1 V, which is relevant for its electrical performance in circuits.

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