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Infineon BSZ N-Channel MOSFET 212 A, 40 V, TSDSON-8 FL Package BSZ010NE2LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ010NE2LS5ATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features very low on-resistance of 0.7 mΩ enhancing efficiency.
- It comes in a compact TSDSON-8 FL surface mount package with 8 pins.
- Maximum power dissipation of 81 W supports demanding power applications.
- Operating temperature range spans from -55°C to 175°C ensuring reliability.
- Maximum gate-source voltage rating is 20 V for safe operation.
- Forward voltage is 1 V, minimizing conduction losses.
- Typical gate charge is 80 nC at Vgs improving switching performance.
Product Description
The Infineon BSZ010NE2LS5ATMA1 is an advanced N-Channel MOSFET designed to meet the needs of high-performance power switching applications, particularly in buck converters. Featuring a maximum continuous drain current of 212 A and a drain-source voltage rating of 40 V, this device is suitable for demanding power electronics environments.
Its TSDSON-8 FL package ensures a small footprint surface mount solution with 8 pins, aiding efficient thermal management and layout design.
With an exceptionally low on-resistance of 0.7 mΩ, the MOSFET minimizes conduction losses, enhancing the overall system efficiency and thermal performance. The forward voltage drop of 1 V and typical gate charge of 80 nC at Vgs contribute to improved switching characteristics.
Designed to operate reliably across a wide temperature range from -55°C to 175°C, this component is built for robustness in industrial, automotive (non-standard), and industrial power management systems.
Very low on-resistance of 0.7 mΩ for superior efficiency. Compact TSDSON-8 FL surface mount package with 8 pins. High power dissipation capability of 81 W. Wide operating temperature range ensuring reliability. Safe maximum gate-source voltage of 20 V.
Optimized gate charge for fast switching. This MOSFET is RoHS compliant, halogen-free according to IEC61249-2-21 standards, aligning with environmental safety requirements. Its primary applications include industrial power supplies, DC/DC converters, and other high load switching operations requiring efficient power control.
Choose Infineon's BSZ010NE2LS5ATMA1 for reliable, efficient power switching in compact, high-performance designs. Explore additional Infineon components and power semiconductor solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon BSZ010NE2LS5ATMA1 is 212 A.
This model operates reliably across a temperature range from -55°C to 175°C.
The maximum drain-source voltage rating for this MOSFET is 40 V.
The on-resistance of the Infineon BSZ010NE2LS5ATMA1 is exceptionally low at 0.7 mΩ.
This MOSFET has a maximum power dissipation capability of 81 W.
The typical gate charge at Vgs for this model is 80 nC.
It comes in a compact TSDSON-8 FL surface mount package with 8 pins.
The maximum gate-source voltage rating for this MOSFET is 20 V.
Yes, the Infineon BSZ010NE2LS5ATMA1 is RoHS compliant and halogen-free according to IEC61249-2-21 standards.
The forward voltage drop for this MOSFET is 1 V, which helps minimize conduction losses.
The channel type of the Infineon BSZ010NE2LS5ATMA1 is N-channel.
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