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Infineon iPB N-Channel MOSFET, 273 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin TO-263 IPB60R070CFD7ATMA1

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Infineon iPB N-Channel MOSFET, 273 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin TO-263 IPB60R070CFD7ATMA1

Name: Infineon iPB N-Channel MOSFET, 273 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin TO-263 IPB60R070CFD7ATMA1
Brand: Infineon
SKU: 299276
Price: 5.36 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	Malaysia
Brand	Infineon
Model	IPB60R070CFD7ATMA1
Mount Type	Surface
Series	iPB
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	273A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Super junction MOSFET designed for high power applications.
Maximum power dissipation of 81 W for reliable performance.
Excellent reverse recovery charge and ultrafast body diode.
Robust gate-source voltage tolerance up to 20 V.
Operating temperature range from -55°C to 175°C.
Low maximum drain source resistance of 1.7 milliohms.
Surface mount device suitable for efficient PCB integration.
Meets RoHS compliance and automotive standard AEC-Q101.

Product Description

Infineon IPB60R070CFD7ATMA1 is a Super junction N-Channel MOSFET encapsulated in a TO-263 (D2PAK) package, engineered for demanding high-power electronic applications such as resonant topologies in switched-mode power supplies (SMPS), servers, telecommunications, and EV charging stations. It delivers a continuous drain current of 273 A and a drain-source voltage rating of 100 V, making it suitable for efficient power management and conversion tasks.

This MOSFET features an ultra-fast body diode with industry-leading reverse recovery characteristics, resulting in up to 69% reduced reverse recovery charge compared to competing devices. Its low gate charge (Qg of 80 nC at Vgs) and minimal drain-source resistance (Rds(on)) help improve switching efficiency and reduce losses.

The device offers robust operation across a wide temperature range from -55°C up to 175°C, supporting demanding industrial and automotive environments, also certified to the automotive AEC-Q101 standard. Its maximum power dissipation rating of 81 W ensures reliability under heavy loads.

The surface-mount TO-263 package facilitates ease of assembly on modern PCBs and effective heat dissipation. The MOSFET is compliant with RoHS legislation, reflecting environmental safety and sustainability considerations.

Typical applications include high power SMPS, server power supplies, telecom equipment, and electric vehicle charging infrastructure, where its efficiency and ruggedness bring significant improvements in system performance and reliability.

Super junction technology for enhanced efficiency. Low forward voltage drop of 1.2 V for reduced conduction losses. Optimized for hard commutation ruggedness in switching circuits. Up to 69% reduced reverse recovery charge for improved switching.

Robustness in high dv/dt and di/dt conditions for reliable operation. 3-pin surface mount TO-263 package for compact and efficient integration. Explore the Infineon product range for advanced semiconductor solutions in power electronics at EnvMart.