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Infineon IAUC N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO8 Power MOSFET IAUC100N04S6L014ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC100N04S6L014ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features a low maximum drain-source resistance of 1.4 mΩ for efficient power conversion.
- Designed for surface mount with a compact 5 x 6 mm SuperSO8 package to save PCB space.
- Supports a continuous drain current of up to 100 A and maximum power dissipation of 81 W.
- Operates safely within a temperature range of -55°C to 175°C ensuring reliable automotive use.
- Gate-source voltage maximum rating is ±20 V, compatible with low voltage logic controls.
- Enhanced switching characteristics with typical gate charge of 80 nC at Vgs.
- Fully compliant with RoHS standards and qualified to automotive grade AEC-Q101.
Product Description
Infineon IAUC100N04S6L014ATMA1 is a high-performance N-Channel Enhancement Mode Power MOSFET, engineered using OptiMOS™ 6 technology for automotive applications requiring high efficiency and reliability. Encapsulated in a compact 8-pin SuperSO8 (5 x 6 mm) surface-mount package, this device supports maximum drain-source voltage (Vds) of 40 V and continuous drain current (Id) of 100 A.
The MOSFET exhibits an exceptionally low maximum drain-source resistance (Rds(on)) of 1.4 mΩ, contributing to reduced conduction losses and enhanced power efficiency. With a maximum power dissipation of 81 W, it can handle demanding load conditions typical in automotive and industrial power management systems.
This component is designed for optimal thermal performance and reliability with an operating temperature range from -55°C to 175°C. The gate-source voltage rating of ±20 V facilitates compatibility with various logic-level drive circuits, and the typical forward voltage (Vf) is 1.1 V, enabling smooth switching transitions.
Additional features include a typical gate charge (Qg) of 80 nC at rated gate voltage, ensuring fast switching speeds, which is critical for high-frequency power applications. The IAUC100N04S6L014ATMA1 is 100% avalanche tested and conforms to strict RoHS directives and the AEC-Q101 automotive standard, certifying its suitability for rugged environments and automotive electronics.
Ideal for use in automotive powertrains, industrial power supplies, DC/DC converters, and other high-current switching applications, Infineon’s IAUC series provides robust and efficient solutions for power semiconductor needs.
This MOSFET features a low maximum drain-source resistance of 1.4 mΩ for efficient power conversion. Designed for surface mount with a compact 5 x 6 mm SuperSO8 package to save PCB space. Supports a continuous drain current of up to 100 A and maximum power dissipation of 81 W.
Operates safely within a temperature range of -55°C to 175°C ensuring reliable automotive use. Gate-source voltage maximum rating is ±20 V, compatible with low voltage logic controls. Enhanced switching characteristics with typical gate charge of 80 nC at Vgs.
Fully compliant with RoHS standards and qualified to automotive grade AEC-Q101. Explore the extensive selection of automotive and industrial semiconductors on EnvMart for reliable, industry-grade electronic components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 A.
The maximum drain-source voltage (Vds) rating is 40 V.
This MOSFET can handle a maximum power dissipation of 81 W.
It operates safely within a temperature range of -55°C to 175°C.
The maximum gate-source voltage rating is ±20 V.
The typical gate charge (Qg) at rated gate voltage is 80 nC.
The maximum drain-source resistance (Rds(on)) is 1.4 mΩ.
It is qualified to the automotive standard AEC-Q101.
Yes, it is fully compliant with RoHS standards.
This model has an N-channel type.
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