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Infineon BSC0 Series N-Channel MOSFET, 40 V Drain-Source Voltage, 381 A Continuous Drain Current, 81 W BSC025N08LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC025N08LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Ultra-low on-resistance providing reduced conduction losses.
- Supports heavy current loads with 381 A maximum continuous drain current.
- 40 V drain-source rating suitable for low-voltage power stages.
- 81 W maximum power dissipation for elevated power handling capacity.
- Typical gate charge of 80 nC allowing faster switching transitions.
- Wide operating temperature range from -55°C to +150°C ensuring reliability in harsh environments.
- Supplied in surface-mount TDSON package for compact PCB assembly.
- Forward voltage drop of 1.2 V relevant to thermal design considerations.
Product Description
Infineon BSC025N08LS5ATMA1 is a high-current N-Channel MOSFET from the BSC0 series, engineered for demanding power switching applications requiring high efficiency, reliability, and compact form factor. This device features a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V.
Designed with ultra-low on-resistance, it minimizes conduction losses, improving overall power efficiency. Its typical gate charge of 80 nC enables faster switching speeds, making it suitable for high-frequency applications.
This MOSFET is housed in an 8-pin TDSON surface-mount package optimized for compact PCB layout and enhanced thermal performance. It supports power dissipation up to 81 W, with an operating temperature range spanning from -55°C to +150°C, ensuring robust operation under thermal extremes.
The typical forward voltage is 1.2 V, a factor that must be considered in junction temperature calculations for high load conditions. It adheres to RoHS compliance, restricting hazardous material usage for environmentally friendly applications.
Common uses include high-current DC-DC converters, synchronous rectification in power supplies, motor control stages, and server power distribution systems. The device suits surface-mount power assemblies where compactness and power efficiency are critical.
Ultra-low on-resistance reducing conduction losses. High continuous drain current of 381 A for heavy load currents. 40 V drain-source voltage allowing low-voltage power stage designs. 81 W power dissipation supporting elevated power handling.
80 nC gate charge for faster switching transitions. Wide temperature range from -55°C to +150°C for thermal extremes. Compact 8-pin TDSON surface-mount package. Forward voltage drop of 1.2 V relevant to thermal considerations.
RoHS compliant ensuring environmental safety. Application versatility including DC-DC converters, motor controls, and server power distribution. Explore the comprehensive range of MOSFETs and power switching devices on EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon BSC025N08LS5ATMA1 is 381 A.
This MOSFET has a drain-source voltage rating of 40 V, making it suitable for low-voltage power stages.
The maximum power dissipation for this model is 81 W, which supports elevated power handling capacity.
The typical gate charge for the BSC025N08LS5ATMA1 is 80 nC, allowing for faster switching transitions.
This model operates within a temperature range of -55°C to +150°C, ensuring reliability in harsh environments.
The BSC025N08LS5ATMA1 is supplied in an 8-pin TDSON surface-mount package, optimized for compact PCB assembly.
The typical forward voltage drop for this model is 1.2 V, which is relevant for thermal design considerations.
This MOSFET is RoHS compliant, restricting hazardous material usage for environmentally friendly applications.
The maximum gate-source voltage for the BSC025N08LS5ATMA1 is 20 V.
This model features an N-channel configuration, suitable for various power switching applications.
Common applications for this MOSFET include high-current DC-DC converters, synchronous rectification in power supplies, and motor control stages.
The maximum drain-source resistance for the BSC025N08LS5ATMA1 is 0.7 mΩ, contributing to its low on-resistance characteristics.
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