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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC007N04LS6ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC007N04LS6ATMA1 is a BSC0 series high-current N-channel MOSFET designed for efficient power switching and conversion applications. It features a robust 8-pin TDSON surface-mount package, enabling low conduction losses with a minimal on-resistance of 0.7 milliohm. The device supports a continuous drain current of up to 381 A and withstands a drain-source voltage of 40 V, suitable for medium-voltage power stages.
This MOSFET operates reliably from -55°C to 175°C, making it ideal for industrial, automotive, and power management environments that demand wide temperature tolerance. Its typical gate charge of 80 nC facilitates controlled switching, optimizing converter efficiency. The low forward voltage drop of 1 V aids in reducing power losses in motor driver stages and other power-switching circuits.
The 1.6 W power dissipation rating allows compact thermal designs, especially when mounted on PCBs with optimized copper areas to enhance heat removal and reduce parasitic inductance. The maximum gate-source voltage rating of 20 V simplifies gate driver implementation while ensuring device safety.
Typical industrial and commercial applications include high-current DC-DC converters in power supply systems, motor driver circuits requiring low forward voltage, power management in battery systems, and general power-switching circuits in various industrial equipment. Its surface-mount form factor supports modern PCB layout practices in compact modules.
The BSC007N04LS6ATMA1 complies with RoHS environmental standards, ensuring it meets directives for hazardous substance restrictions. Maximum continuous drain current of 381 A for heavy load handling. Low on-resistance of 0.7 milliohm minimizes conduction losses.
Operating temperature range from -55°C to 175°C suited for harsh conditions. Typical gate charge of 80 nano-coulombs enables efficient switching. Maximum gate-source voltage of 20 V for ease of gate driver design. Forward voltage of 1 V reduces power loss in switching applications.
Compact 8-pin TDSON surface mount package for minimized parasitics. RoHS compliant for environmental safety standards. Explore the extensive Infineon MOSFET range on EnvMart to meet your semiconductor and power management needs.
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