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Infineon N-Channel MOSFET TDSON 8-Pin, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 81 W BSC034N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC034N06NSATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features very low on-resistance of 0.7 mΩ for efficient conduction.
- Maximum power dissipation of 81 W supports sustained thermal operation.
- Typical gate charge of 80 nC ensures effective switching control.
- Suitable for surface mount assembly with an 8-pin configuration.
- Operates reliably over a temperature range of −55 °C to +150 °C.
- Maximum gate-to-source voltage limited to 20 V to prevent gate overstress.
- Forward voltage of 1.2 V minimizes conduction losses during operation.
- Ideal for use in DC-DC converters, motor drive stages, and synchronous rectification.
Product Description
Infineon BSC034N06NSATMA1 is a high-performance N-channel MOSFET designed for power switching applications requiring high continuous drain current of 381 A and moderate voltage rating of 40 V. The device is housed in an 8-pin TDSON package suitable for surface mount PCB assembly.
This MOSFET offers a very low on-resistance of 0.7 mΩ to reduce conduction losses, and it supports maximum power dissipation of 81 W enabling robust thermal handling for industrial-grade equipment. Its typical gate charge of 80 nC allows for efficient switching, optimizing power control circuits.
The component reliably operates across a wide temperature range from −55 °C to +150 °C, making it fit for harsh industrial, automotive, and commercial environments. The maximum gate-to-source voltage of 20 V must be observed to avoid gate damage. A forward voltage of 1.2 V minimizes voltage drop under conduction, further improving efficiency in power supply circuits.
This MOSFET is widely utilized in high-current DC-DC converters, motor-drive stages in industrial equipment, power management modules for servers and racks, and synchronous rectification in power supplies, delivering reliable performance in demanding applications.
Very low Rds(on) of 0.7 mΩ for reduced conduction losses. High continuous drain current of 381 A for heavy load capability. Maximum power dissipation of 81 W ensures thermal durability. Typical gate charge of 80 nC for better switching efficiency.
Wide operating temperature from −55 °C to 150 °C. Maximum gate-to-source voltage of 20 V to prevent overstress. Forward voltage of 1.2 V to minimize conduction losses. 8-pin TDSON surface-mount package for easy PCB integration.
RoHS compliant for environmental adherence.
This product is a crucial component for industrial, commercial, and automotive electronics requiring efficient power switching. For more advanced semiconductor and MOSFET options, explore the broad Infineon product category at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
It can handle a maximum drain-source voltage of 40 V.
The maximum power dissipation rating is 81 W.
This MOSFET features a very low on-resistance of 0.7 mΩ.
The typical gate charge is 80 nC.
It operates reliably over a temperature range of −55 °C to +150 °C.
The maximum gate-to-source voltage is limited to 20 V.
It comes in an 8-pin TDSON package suitable for surface mount assembly.
Yes, it is RoHS compliant, adhering to environmental standards.
This model is suitable for use in DC-DC converters, motor drive stages, and synchronous rectification.
The forward voltage is 1.2 V, which helps minimize conduction losses during operation.
The channel type of this device is N-channel.
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