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Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ021N04LS6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSZ021N04LS6ATMA1
Mount Type Surface
Series BSZ
Maximum Operating Temperature 175°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 212A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports a maximum continuous drain current of 212 amperes.
  • Operates with a maximum drain-source voltage of 40 volts.
  • Features a low drain-source resistance of 0.7 milliohms to minimize power loss.
  • Capable of dissipating up to 81 watts of power efficiently.
  • Typical gate charge is 80 nanocoulombs at Vgs.
  • Designed for operation in temperature ranges from -55°C to 175°C.
  • Maximum gate-source voltage rating is ±20 volts to ensure reliability.
  • Package is a surface mount 8-pin PQFN suitable for compact PCB layouts.

Product Description

Infineon BSZ021N04LS6ATMA1 N-Channel MOSFET is a high current power transistor designed for surface mount technology with an 8-pin PQFN package. It features an exceptionally low on-resistance, enabling high efficiency in power conversion and switching applications. Rated at a maximum continuous drain current of 212 amperes and a drain-source voltage of 40 volts, this MOSFET is robust for demanding electronic circuits.

This MOSFET supports peak power dissipation of 81 watts and a typical gate charge of 80 nanocoulombs, which facilitate fast switching and reduced energy losses. Its operating temperature range from -55°C to 175°C allows deployment in harsh industrial and automotive environments. The device is halogen-free in compliance with IEC standards and has passed rigorous 100% avalanche testing for durability.

The low forward voltage of 1 volt enhances the overall efficiency of power stages in applications such as power supplies, motor drives, and automotive electronics. Its surface mount 8-pin PQFN package ensures compactness and ease of board assembly, making it suitable for space-constrained designs.

Infineon's BSZ series represents the OptiMOS 6 generation power transistors, which are specifically engineered for applications requiring high performance and reliability. This MOSFET is ideal for industrial power management, automotive electronics, and various consumer electronics implementations.

Maximum continuous drain current: 212 A. Maximum drain-source voltage: 40 V. Drain-source resistance: 0.7 mΩ. Typical gate charge: 80 nC. Maximum power dissipation: 81 W. Operating temperature range: -55°C to 175°C. Maximum gate-source voltage: 20 V.

8-pin PQFN surface mount package. RoHS compliant, halogen-free, avalanche tested. Explore more Infineon MOSFETs and related discrete semiconductor components at EnvMart for your industrial, automotive, manufacturing, and power management needs.

Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ021N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 212 amperes.

It can operate with a maximum drain-source voltage of 40 volts.

The drain-source resistance is 0.7 milliohms, which helps minimize power loss.

The typical gate charge is 80 nanocoulombs at Vgs.

It is capable of dissipating up to 81 watts of power efficiently.

The operating temperature range is from -55°C to 175°C.

The maximum gate-source voltage rating is ±20 volts.

This model comes in an 8-pin PQFN surface mount package, suitable for compact PCB layouts.

Yes, it is RoHS compliant and halogen-free in accordance with IEC standards.

It is designed for applications such as power supplies, motor drives, and automotive electronics.

This model is part of the Infineon BSZ series, representing the OptiMOS 6 generation power transistors.

Key features include low on-resistance, high efficiency, and suitability for harsh environments with rigorous avalanche testing.

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