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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ021N04LS6ATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSZ021N04LS6ATMA1 N-Channel MOSFET is a high current power transistor designed for surface mount technology with an 8-pin PQFN package. It features an exceptionally low on-resistance, enabling high efficiency in power conversion and switching applications. Rated at a maximum continuous drain current of 212 amperes and a drain-source voltage of 40 volts, this MOSFET is robust for demanding electronic circuits.
This MOSFET supports peak power dissipation of 81 watts and a typical gate charge of 80 nanocoulombs, which facilitate fast switching and reduced energy losses. Its operating temperature range from -55°C to 175°C allows deployment in harsh industrial and automotive environments. The device is halogen-free in compliance with IEC standards and has passed rigorous 100% avalanche testing for durability.
The low forward voltage of 1 volt enhances the overall efficiency of power stages in applications such as power supplies, motor drives, and automotive electronics. Its surface mount 8-pin PQFN package ensures compactness and ease of board assembly, making it suitable for space-constrained designs.
Infineon's BSZ series represents the OptiMOS 6 generation power transistors, which are specifically engineered for applications requiring high performance and reliability. This MOSFET is ideal for industrial power management, automotive electronics, and various consumer electronics implementations.
Maximum continuous drain current: 212 A. Maximum drain-source voltage: 40 V. Drain-source resistance: 0.7 mΩ. Typical gate charge: 80 nC. Maximum power dissipation: 81 W. Operating temperature range: -55°C to 175°C. Maximum gate-source voltage: 20 V.
8-pin PQFN surface mount package. RoHS compliant, halogen-free, avalanche tested. Explore more Infineon MOSFETs and related discrete semiconductor components at EnvMart for your industrial, automotive, manufacturing, and power management needs.
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