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Infineon Dual N-Channel MOSFET 20 A, 40 V, 8-Pin SuperSO8 Surface Mount BSC072N04LDATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC072N04LDATMA1 |
| Mount Type | Surface Mount |
| Series | BSC072N04LD |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Maximum Power Dissipation Pd | 65W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Standards/ApprovalsIEC climatic Category, DIN IEC 68-1 | 55/175/56 |
Key Features
- Optimized for fast switching in SMPS applications.
- Featuring low Rds(on) of 7.2 mΩ for high efficiency power transfer.
- Comes in compact 8-pin SuperSO8 5 x 6 mm surface mount package.
- Supports maximum power dissipation of 65 W for reliable operation.
- Operational temperature range from -55°C to 175°C ensures durability in harsh environments.
- Maximum gate-source voltage rating is ±16 V for robust gate control.
- Equipped with dual elements per chip design for enhanced performance.
- Halogen-free construction compliant with IEC61249-2-21 environmental standards.
Product Description
Infineon BSC072N04LDATMA1 is a dual N-Channel power MOSFET designed for demanding power switching applications. It features a maximum continuous drain current rating of 20 A and a drain-source voltage of 40 V, packaged in a compact 8-pin SuperSO8 5 x 6 mm surface mount format. This MOSFET utilizes Infineon's OptiMOS T2 technology for superior thermal resistance and fast switching capabilities, making it ideal for Switch Mode Power Supplies (SMPS) and synchronous rectification circuits.
The device has an impressively low on-resistance of 7.2 mΩ, minimizing conduction losses and improving efficiency in power conversion stages. It can handle maximum power dissipation of up to 65 W, supporting robust operation in environments with temperature extremes between -55°C and 175°C. The maximum gate-source voltage is rated at ±16 V, providing flexibility in gate drive voltages without risking damage.
This MOSFET incorporates two elements per chip to enhance performance reliability. Its halogen-free manufacturing process complies with IEC61249-2-21 environmental safety standards, suitable for use in green electronic designs.
Applications of the BSC072N04LDATMA1 include industrial power supplies, automotive circuits not requiring automotive-grade certification, consumer electronics, and various control and switching devices that demand reliable, efficient power handling with compact footprint.
Optimized technology for synchronous rectification in power supplies. Supports surface mount assembly for compact PCB designs. IEC climatic category 55/175/56 qualifies for extended temperature range use. Pin count of 8 supports robust connection schemes.
Compliance with environmental standards ensures reduced hazardous substances.
Choose the Infineon BSC072N04LDATMA1 for applications requiring a reliable, high-performance dual N-channel MOSFET with excellent thermal management and switching speed, available with a proven track record in power electronics manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for the BSC072N04LDATMA1 is 20 A.
This model has a maximum drain-source voltage rating of 40 V.
The on-resistance (Rds(on)) is 7.2 mΩ, allowing for high efficiency power transfer.
It comes in a compact SuperSO8 package measuring 5 x 6 mm.
The operational temperature range is from -55°C to 175°C.
The maximum power dissipation is 65 W, supporting reliable operation.
The maximum gate-source voltage rating is ±16 V.
This MOSFET incorporates two elements per chip for enhanced performance.
It supports surface mount assembly, suitable for compact PCB designs.
It is halogen-free and complies with IEC61249-2-21 environmental standards.
This model is suitable for industrial power supplies, automotive circuits, and consumer electronics.
The typical gate charge (Qg) at Vgs is 52 nC.
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