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Infineon 650 V CoolMOS™ CFD7 N-Channel Enhancement MOSFET, 107 A, 171 W Power Dissipation, ThinPAK 8x8 IPL65R115CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 24mm |
| Model | IPL65R115CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 107A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- The MOSFET features a maximum power dissipation of 171 W for high load endurance.
- It has a typical gate charge of 80 nC at 10 V gate-source voltage enabling fast switching.
- Designed with a low maximum drain-source resistance of 95 mΩ improving conduction efficiency.
- Operates reliably within a temperature range of -40°C to 150°C for automotive and industrial environments.
- Complies with RoHS standards and meets the automotive AEC-Q101 qualification.
- Ideal for resonant topologies in server, telecom, solar, and EV-charging station industrial applications.
- The packaging format is a surface-mount ThinPAK 8x8 with 5 pins for easy PCB integration.
Product Description
The Infineon IPL65R115CFD7AUMA1 is a 650 V CoolMOS™ CFD7 super junction N-Channel MOSFET optimized for high efficiency and power density in industrial resonant topologies such as servers, telecommunications, solar inverters, and electric vehicle charging stations.
This enhancement mode MOSFET supports a maximum continuous drain current of 107 A with a low Rds(on) of 95 mΩ, reducing conduction losses significantly. It dissipates up to 171 W of power, allowing stable operation under heavy load conditions.
The device integrates a typical gate charge of 80 nC at 10 V gate-to-source voltage, supporting improved switching speed and turn-off behavior. Operating temperature ranges from -40°C to 150°C, making it suitable for automotive-grade applications compliant with the AEC-Q101 specification.
Packaged in a compact ThinPAK 8x8 surface mount with 5 pins, it facilitates space-saving PCB designs while maintaining high performance. The MOSFET is RoHS compliant, ensuring environmental safety standards.
The MOSFET significantly reduces switching losses compared to competitors, enhancing efficiency in SMPS industrial power supplies. It provides an additional 50 V breakdown voltage margin, increasing robustness for higher bus voltage designs.
Applications include industrial power supplies, telecom equipment, renewable energy inverters, and EV charging infrastructure. The improved turn-off and reverse recovery characteristics enable the highest efficiency and power density in advanced power conversion systems.
Infineon products like IPL65R115CFD7AUMA1 contribute to efficient, reliable power management in demanding industrial and automotive environments. Explore more power semiconductor components on EnvMart for tailored power solutions.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum power dissipation of this model is 171 W, allowing it to handle high load conditions effectively.
This unit supports a maximum continuous drain current of 107 A, making it suitable for demanding applications.
The maximum drain-source voltage rating for this MOSFET is 650 V, providing a robust solution for high-voltage applications.
It has a typical gate charge of 80 nC at a 10 V gate-source voltage, which supports fast switching capabilities.
The maximum drain-source resistance (Rds(on)) is 95 mΩ, which improves conduction efficiency.
This model operates reliably within a temperature range of -40°C to 150°C, suitable for automotive and industrial environments.
It is packaged in a ThinPAK 8x8 format with 5 pins, facilitating easy PCB integration.
Yes, it is RoHS compliant and meets the automotive AEC-Q101 qualification, ensuring it adheres to environmental and automotive standards.
This model is ideal for applications in industrial power supplies, telecom equipment, renewable energy inverters, and electric vehicle charging stations.
The forward voltage (Vf) for this device is 1 V, which is relevant for its performance in circuits.
This device features an N-channel type, which is common for enhancement mode MOSFETs.
The maximum gate-source voltage (Vgs) is 30 V, which is important for ensuring safe operation of the MOSFET.
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