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Nexperia N-Channel Enhancement MOSFET, 7.9 A, 30 V, 12.5 W, 8-Pin MLPAK33 PXN017-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN017-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET features enhancement channel mode for efficient switching performance.
- It is designed with trench MOSFET technology providing ultra-low gate charge for enhanced system efficiency.
- The device supports a maximum power dissipation of 12.5 W and maximum gate-source voltage of 20 V.
- Operating temperature ranges from -55°C to 150°C suitable for a wide range of industrial applications.
- Compact 3.3 x 3.3 mm MLPAK33 surface mount package optimizes PCB space usage.
- The MOSFET provides superfast switching with soft-recovery to reduce EMI and ringings.
- No automotive or special standards apply, focusing on general electronic component use.
Product Description
Nexperia PXN017-30QLJ is an N-Channel enhancement mode MOSFET designed for surface-mount applications. It delivers a maximum continuous drain current of 7.9 A and withstands up to 30 V drain-source voltage. Packaged in a compact MLPAK33 (SOT8002) 8-pin plastic package, it employs trench MOSFET technology to achieve ultra-low gate charge, enhancing system efficiency especially at higher switching frequencies.
This device features a maximum power dissipation rating of 12.5 W and can operate within a temperature range from -55°C to 150°C, making it suitable for various industrial and electronic applications such as power management, automotive electronics (non-standard compliant), and general semiconductor devices.
The enhancement mode channel ensures effective control with a maximum gate-source voltage of 20 V and extremely low on-resistance of 13.6 mΩ, which reduces power loss and improves thermal performance.
The MLPAK33 package footprint of 3.3 x 3.3 mm is optimized for high-density PCB layouts, supporting surface mount technology (SMT) assembly processes.
Its fast switching capability with soft-recovery characteristics helps in lowering electromagnetic interference and voltage spikes, making it ideal for switching power supplies, motor control circuits, and other high-frequency applications.
This MOSFET features enhancement channel mode for efficient switching performance. It is designed with trench MOSFET technology providing ultra-low gate charge for enhanced system efficiency. The device supports a maximum power dissipation of 12.5 W and maximum gate-source voltage of 20 V.
Operating temperature ranges from -55°C to 150°C suitable for a wide range of industrial applications. Compact 3.3 x 3.3 mm MLPAK33 surface mount package optimizes PCB space usage. The MOSFET provides superfast switching with soft-recovery to reduce EMI and ringings.
No automotive or special standards apply, focusing on general electronic component use. This product is ideal for use in electronic industrial equipment, power management modules, computer hardware, and automation systems.
Explore more Nexperia MOSFETs and related semiconductor components on EnvMart for reliable and efficient circuit design solutions.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 7.9 A.
It can withstand a maximum drain-source voltage of 30 V.
The device supports a maximum power dissipation of 12.5 W.
The operating temperature range is from -55°C to 150°C.
It is packaged in a compact MLPAK33 (SOT8002) 8-pin plastic package.
The maximum gate-source voltage is 20 V.
The on-resistance is extremely low at 13.6 mΩ.
This model features an N-channel enhancement mode.
The dimensions of the MLPAK33 package are 3.3 x 3.3 mm.
It is suitable for power management, motor control circuits, and other high-frequency applications.
It employs trench MOSFET technology for ultra-low gate charge and enhanced system efficiency.
No, it does not comply with automotive or special standards, focusing instead on general electronic component use.
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