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Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK56E PSMN1R5-50YLHX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PSMN1R5-50YLHX |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | LFPAK56E |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Optimized for battery powered 36 V applications requiring avalanche capability.
- LFPAK56E package ensures low inductance and easy solder-joint inspection.
- Copper-clip and solder die attach reduce package resistance and inductance.
- Capable of 12.5 W maximum power dissipation for robust operation.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Low gate charge values enable high efficiency at switching frequencies.
- Soft body-diode recovery minimizes spiking and electromagnetic interference.
- Qualified to 175°C for extended reliability.
Product Description
The Nexperia PSMN1R5-50YLHX is an N-Channel MOSFET designed for applications demanding high efficiency and reliability within a 4-pin LFPAK56E surface mount package. It supports a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V with a low on-resistance of 13.6 mΩ, making it suitable for power management in battery-powered systems.
This MOSFET package features a low-stress exposed lead-frame, which ensures ultimate reliability and convenient inspection of solder joints. The copper clip and solder die attach optimize thermal and electrical performance by reducing resistance and inductance within the package.
With a maximum power dissipation rating of 12.5 W and a maximum operating temperature of 150°C, the device operates reliably in demanding industrial, consumer electronics, and portable battery-powered applications. The device is avalanche rated and qualified to 175°C, guaranteeing superior ruggedness and long-term durability.
Low gate charge (QG), gate-to-drain charge (QGD), and output charge (QOSS) result in high efficiency, especially at high switching frequencies, supporting fast switching performance. The superfast switching with soft body-diode recovery reduces voltage and current spikes as well as electromagnetic interference, making it an ideal choice for low EMI designs.
Optimized for 36 V battery powered circuits requiring strong avalanche capability. LFPAK56E package enables surface mount assembly with reliable thermal management. Copper-clip and solder die attach enhance package inductance and resistance characteristics.
Maximum continuous drain current: 10.3 A. Maximum drain-source voltage: 30 V. Maximum power dissipation: 12.5 W. Operating temperature range: -55°C to 150°C. Maximum gate-source voltage: 20 V. 4-pin package facilitates PCB design and assembly.
Qualified to withstand 175°C and avalanche rated for robust applications.
Common use cases include power management modules in industrial equipment, electronic controls, consumer devices, and automotive electronics (non-automotive standard). Its features also suit manufacturing, laboratory test equipment, and power conversion circuits where efficiency and durability are critical.
Explore more Nexperia MOSFETs and semiconductor products at EnvMart for reliable components suited to your electronics design projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The operating temperature range for this unit is from -55°C to 150°C.
It comes in a 4-pin LFPAK56E surface mount package.
The maximum power dissipation rating is 12.5 W.
The maximum gate-source voltage is 20 V.
The maximum drain-source resistance is 13.6 mΩ.
It is optimized for battery powered 36 V applications requiring avalanche capability.
The LFPAK56E package ensures low inductance and facilitates easy solder-joint inspection.
The copper clip and solder die attach reduce package resistance and inductance, optimizing thermal and electrical performance.
The soft body-diode recovery minimizes spiking and electromagnetic interference, contributing to high efficiency at switching frequencies.
The country of origin for this MOSFET is India.
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