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Nexperia Dual Logic Level N-Channel MOSFET 40A 60V 8-Pin LFPAK56D BUK9K13-60RAX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK9K13-60RAX |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK56D |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28.3mΩ |
| Maximum Power Dissipation Pd | 64W |
| Typical Gate Charge Qg @ Vgs | 22.4nC |
| Maximum Gate Source Voltage Vgs | 15V |
Key Features
- Features a low maximum drain-source resistance of 28.3 milliohms.
- Typical gate charge is 22.4 nanocoulombs at 15V gate-source voltage.
- Maximum power dissipation rating is 64 watts.
- Designed for surface mount applications with excellent thermal and electrical reliability.
- Operates in temperature range from -55°C to 175°C.
- Qualified under AEC-Q101 for automotive-grade reliability.
- Suitable for repetitive avalanche energy environments.
- Incorporates Application Specific (ASFET) repetitive avalanche silicon technology.
Product Description
The Nexperia BUK9K13-60RAX is a dual, logic level N-channel MOSFET housed in a compact 8-pin LFPAK56D surface mount package. It is engineered to provide robust switching performance with a continuous drain current of 40A and a maximum drain-source voltage of 60V, making it suitable for high-power electronic applications.
This MOSFET features a low on-resistance of 28.3 milliohms which minimizes conduction losses and enhances efficiency. The typical gate charge of 22.4 nanocoulombs ensures fast switching capability while the maximum power dissipation rating of 64 watts supports reliable thermal handling in demanding environments.
Designed for surface mount technology (SMT), it employs LFPAK copper clip packaging for superior thermal conductivity and reliability. The device is qualified to automotive standards, specifically AEC-Q101, ensuring it meets rigorous quality and durability requirements. It is repetitive avalanche rated with tested performance to one billion avalanche events, underlining exceptional robustness for avalanche energy applications.
The operational temperature range from -55°C to 175°C allows use in a wide variety of industrial, automotive, power management, and consumer electronic applications. It supports repetitive avalanche conditions with a 30°C junction temperature rise. Its gull-wing leads facilitate automated manufacturing processes.
Dual N-channel MOSFET with ASFET repetitive avalanche silicon technology. Surface mount LFPAK56D package with copper clip for effective thermal management. Continuous drain current of 40A and voltage rating of 60V. Maximum drain-source resistance of 28.3 milliohms for power efficiency.
Gate charge optimized for fast switching at 22.4nC typical. Wide operation temperature from -55°C to 175°C supporting automotive use cases. Qualified to AEC-Q101 automotive standard for high reliability. Tested to 1 billion avalanche events with strong repetitive avalanche rating.
This power MOSFET is ideal for industrial automation, automotive electronics, power converters, motor drives, and high-frequency switching power supplies. Its reliable design and compliance with automotive quality standards make it well-suited to applications requiring rugged performance under harsh electrical and thermal conditions.
Explore our full range of Power MOSFETs for robust and efficient semiconductor solutions in Electronics & Electricals at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40A.
It has a maximum drain-source voltage rating of 60V.
The maximum drain-source resistance is 28.3 milliohms, which helps minimize conduction losses.
The typical gate charge is 22.4 nanocoulombs at a gate-source voltage of 15V.
The maximum power dissipation rating is 64 watts.
It operates within a temperature range from -55°C to 175°C.
This model is housed in an 8-pin LFPAK56D surface mount package.
Yes, it is qualified under AEC-Q101 for automotive-grade reliability.
It incorporates Application Specific (ASFET) repetitive avalanche silicon technology, rated for one billion avalanche events.
The pin count for this model is 8.
This MOSFET is RoHS compliant, ensuring it meets environmental standards.
It is designed for surface mount applications.
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