STMicroelectronics STW N-Channel MOSFET, 55 A, 30 V Enhancement Type, 4-Pin TO-247 STWA32N65DM6AG

The STMicroelectronics STWA32N65DM6AG is a high-voltage N-channel Power MOSFET designed for demanding industrial and automotive electronics applications. This enhancement mode device is packaged in a 4-pin TO-247 through-hole mount format, enabling easy integration into power modules, motor drives, and high-efficiency bridge topologies.

It delivers a maximum continuous drain current of 55 A and supports a maximum drain-source voltage of 30 V, making it suitable for robust power switching tasks. The MOSFET features a maximum power dissipation of 320 W and wide operating temperature capability from -55°C to 150°C, enabling reliable operation in harsh environments.

This device is part of the MDmesh DM6 family featuring fast recovery diodes with very low recovery charge (Qrr) and enhanced recovery time (trr), which lowers switching losses significantly. It exhibits extremely rugged dv/dt characteristics and integrates a Zener protection gate, ensuring enhanced gate stability and reliability under transient conditions.

The typical gate charge of 52.6 nC allows for efficient drive control and faster switching speed, while the forward voltage drop of 1.5 V reduces power loss during conduction. Fully avalanche tested and certified to meet AEC-Q101 automotive standards, this MOSFET is ideal for automotive electronics, industrial power supply systems, and high-performance motor control applications.

With UL standards compliance and a robust TO-247 package measuring 40.92 mm in length, 15.8 mm in width, and 5.1 mm in height, the STWA32N65DM6AG promises durability and ease of mounting in through-hole configurations. Its low RDS(on) resistance of 45 mΩ further improves efficiency in switching circuits.

High-voltage N-channel enhancement Power MOSFET for through-hole mounting. Max continuous drain current 55 A and drain-source voltage rating of 30 V. Fast recovery diode with low recovery charge and dv/dt ruggedness. Automotive qualified to AEC-Q101 standard and fully avalanche tested.

Typical gate charge of 52.6 nC and max gate-source voltage ±25 V. Max power dissipation up to 320 W for high-power applications. Operating temperature range -55°C to 150°C for industrial robustness. TO-247 package with four pins and easy through-hole mounting.

This MOSFET is suitable for automotive electronics, industrial motor drives, and power management in demanding environments. Explore more power semiconductor devices and high-quality MOSFETs within EnvMart’s electronics component category for optimized performance and reliability.