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Infineon IPA N-Channel MOSFET 192A 40V 3-Pin TO-263 Surface Mount IRF100S201
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF100S201 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 192A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a 3-pin TO-263 surface mount package for efficient mounting.
- Maximum drain-source resistance of 2.9 milliohms ensures low conduction losses.
- Typical gate charge of 80 nanocoulombs at 8 V gate-source voltage for fast switching.
- Supports maximum power dissipation rating of 81 W for robust thermal performance.
- Operates reliably between -55°C to 175°C operating temperature range.
- Meets RoHS compliance and AEC-Q101 automotive standards for quality and reliability.
- Maximum gate-source voltage is rated at ±20 V to protect against voltage spikes.
- Forward voltage drop is 1.2 V, optimizing efficiency in power circuits.
Product Description
Infineon IRF100S201 is an IPA series N-Channel power MOSFET designed for high-current applications requiring ruggedness and efficiency within electronics and electrical systems.
This power MOSFET handles a continuous drain current of up to 192 A and supports a maximum drain-source voltage of 40 V, making it suitable for low-frequency switching applications in power management and automotive electronics.
The device comes in a TO-263 surface-mount package with 3 pins, ensuring compatibility with modern PCB assembly processes while providing excellent thermal dissipation. It exhibits a low maximum drain-source resistance of 2.9 milliohms, which helps reduce conduction losses and improves overall energy efficiency.
The typical gate charge of 80 nC at a gate-source voltage of 8 V allows for rapid switching, enhancing circuit performance in switching regulators and power converters.
With a maximum power dissipation of 81 W, it reliably operates across a wide temperature range from -55°C to 175°C, ensuring durability in various industrial, automotive, and manufacturing environments.
This MOSFET adheres to RoHS environmental standards and complies with the AEC-Q101 automotive qualification, validating its suitability for rigorous automotive system requirements.
Features a 3-pin TO-263 surface-mount package for efficient mounting. Maximum continuous drain current of 192 A enhances high power applications. Low drain-source resistance of 2.9 milliohms minimizes power loss. Typical gate charge of 80 nanocoulombs supports fast switching.
Maximum power dissipation rating of 81 W for robust thermal handling. Wide operating temperature range from -55°C to 175°C for demanding environments. RoHS compliant and meets automotive AEC-Q101 standard. Maximum gate-source voltage of ±20 V safeguards the device.
Forward voltage drop of 1.2 V optimizes efficiency in circuits. This product is ideal for industrial power management, automotive electronics, and manufacturing sectors where reliability and high current handling are critical.
Explore more electronic components and Power MOSFETs in our extensive catalogue for optimized system designs and enhanced efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 192 A, making it suitable for high power applications.
This MOSFET supports a maximum drain-source voltage of 40 V, which is ideal for low-frequency switching applications.
It comes in a TO-263 surface-mount package with 3 pins, ensuring compatibility with modern PCB assembly processes.
The maximum power dissipation rating for this unit is 81 W, allowing for robust thermal performance.
The typical gate charge is 80 nanocoulombs at a gate-source voltage of 8 V, facilitating fast switching.
It operates reliably within a temperature range of -55°C to 175°C, suitable for various demanding environments.
The maximum gate-source voltage is rated at ±20 V, providing protection against voltage spikes.
The maximum drain-source resistance is 2.9 milliohms, which helps minimize conduction losses.
Yes, it meets RoHS compliance and adheres to the AEC-Q101 automotive standards for quality and reliability.
The forward voltage drop is 1.2 V, which optimizes efficiency in power circuits.
This model is ideal for industrial power management, automotive electronics, and manufacturing sectors requiring high current handling.
The country of origin for this product is India.
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