Infineon IGBT Transistor 20 A 650 V TO-220 Package High Speed Fifth Generation IGP20N65H5XKSA1

The Infineon IGP20N65H5XKSA1 IGBT transistor provides robust power switching with a maximum continuous collector current of 20 A and a collector emitter voltage rating of 650 V. Its TO-220 package design enables effective thermal management ensuring reliable operation in demanding industrial environments.

Part of the High Speed Fifth Generation series, this transistor offers best-in-class efficiency, particularly suitable for hard switching and resonant topology applications. It supports a maximum power dissipation of 125 W, making it ideal for medium to high switching frequency converters.

The device operates reliably in a broad temperature range from -40°C to 175°C and complies with JEDEC standards, ensuring quality and consistency. It features a maximum gate emitter voltage between ±20 and ±30 V and a collector emitter saturation voltage of 1.65 V, contributing to minimal power losses during switching.

This IGBT is applicable in a variety of industrial use cases including solar power inverters, uninterruptible power supplies, welding converters, and other power electronics requiring efficient and durable transistor solutions.

Equipped with TO-220 package for efficient heat dissipation. Maximum power dissipation of 125 W suited for demanding applications. Robust operating temperature range from -40°C to 175°C. High Speed Fifth Generation technology for advanced switching speed.

Complies with JEDEC standards for reliability and performance. Low saturation voltage reduces energy losses. Designed for applications in renewable energy and industrial power electronics. Compact dimensions: length 29.95 mm, width 10.36 mm, height 4.57 mm.

Explore this and other Infineon semiconductors in the EnvMart Electronics & Electricals category for advanced, reliable power device solutions.