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Infineon IGBT, 20 A Maximum Continuous Collector Current, 650 V Maximum Collector Emitter Voltage, TO-220 IGP20N65H5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 29.95mm |
| Model | IGP20N65H5XKSA1 |
| Width | 10.36mm |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V |
| Maximum Power Dissipation Pd | 125W |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V |
Key Features
- Maximum continuous collector current of 20 amperes ensures efficient current conduction.
- Collector emitter voltage rating up to 650 volts supports medium to high voltage applications.
- TO-220 package provides excellent thermal management and easy PCB mounting.
- Maximum power dissipation of 125 watts allows handling significant power loads.
- Operates at temperatures ranging from -40°C minimum to a maximum of 175°C junction temperature.
- Maximum gate emitter voltage tolerance is ±20 to ±30 volts for robust gate protection.
- Compact dimensions with length 29.95mm, width 10.36mm, and height 4.57mm.
- Complies with JEDEC standards ensuring quality and reliability.
Product Description
Infineon IGP20N65H5XKSA1 is a high-speed fifth generation IGBT transistor designed to deliver high performance in power switching applications. This transistor supports a continuous collector current of 20A and a maximum collector emitter voltage of 650V, encapsulated in a TO-220 package that ensures efficient heat dissipation and robustness.
The device operates reliably over a wide temperature range from -40°C to 175°C junction temperature, allowing for demanding industrial environments. It features a maximum power dissipation of 125W, which makes it suitable for moderate to high power applications.
With a maximum gate emitter voltage tolerance of ±20 to ±30V and a maximum collector emitter saturation voltage of 1.65V, the IGP20N65H5XKSA1 offers excellent efficiency and reliability in switching and resonant topology designs.
Its compact dimensions of 29.95mm length, 10.36mm width, and 4.57mm height enable easy integration on PCBs and assemblies. Conforming to JEDEC standards ensures quality and compatibility within industry requirements.
This IGBT transistor is applicable in a variety of power electronic solutions including solar inverters, uninterruptible power supplies, welding machines, and mid to high frequency switching converters in sectors such as industrial, commercial, and renewable energy.
Maximum continuous collector current of 20A provides efficient conduction. Collector emitter voltage rating of 650V supports versatile power needs. Robust TO-220 package helps in thermal management and mounting. 127W power dissipation rating suitable for high-load applications.
Wide operating temperature ensures performance in extreme conditions. Gate emitter voltage tolerance protects the device under switching stresses. Compact size for flexible PCB design. JEDEC certified for compliance and reliability.
Supports industry applications like solar converters and UPS systems. Designed for high-speed switching and efficiency. Explore our comprehensive Electronics & Electricals catalog at EnvMart for more semiconductor and industrial power components tailored to your technological needs.
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Frequently Asked Questions
The maximum continuous collector current of the IGP20N65H5XKSA1 is 20 amperes, ensuring efficient current conduction in power applications.
This model has a maximum collector emitter voltage rating of 650 volts, making it suitable for medium to high voltage applications.
The maximum power dissipation for the IGP20N65H5XKSA1 is 125 watts, allowing it to handle significant power loads effectively.
This IGBT has compact dimensions of 29.95mm in length, 10.36mm in width, and 4.57mm in height, facilitating easy PCB integration.
The IGP20N65H5XKSA1 operates reliably over a temperature range from -40°C to 175°C, suitable for demanding industrial environments.
The maximum gate emitter voltage tolerance for this IGBT is ±20 to ±30 volts, providing robust protection under switching conditions.
This model is encapsulated in a TO-220 package, which provides excellent thermal management and ease of PCB mounting.
It complies with JEDEC standards, ensuring quality and reliability in its performance and integration.
The maximum collector emitter saturation voltage for this model is 1.65 volts, contributing to its efficiency in switching applications.
This IGBT is applicable in various power electronic solutions including solar inverters, uninterruptible power supplies, and welding machines.
This IGBT belongs to the High Speed Fifth Generation series, designed for high-performance power switching applications.
Key features include a maximum continuous collector current of 20A, a maximum collector emitter voltage of 650V, and a maximum power dissipation of 125W.
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