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Infineon IGBT Transistor, 20 A Continuous Collector Current, 650 V Collector Emitter Voltage, 125 W Power IGP20N65H5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 29.95mm |
| Model | IGP20N65H5XKSA1 |
| Width | 10.36mm |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V |
| Maximum Power Dissipation Pd | 125W |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V |
Key Features
- The transistor supports a maximum power dissipation of 125 W for efficient thermal management.
- It is designed for high speed fifth generation series applications with JEDEC standard compliance.
- The maximum gate emitter voltage is ±20 to ±30 volts, ensuring reliable switching performance.
- Operating temperature ranges from -40°C minimum to a maximum of 175°C for robust use under demanding conditions.
- Compact package dimensions include a length of 29.95 mm, width of 10.36 mm, and height of 4.57 mm.
- Suitable for solar converters, uninterruptible power supplies, and welding converters.
- Operates efficiently in mid to high switching frequency power converters.
- Supports hard switching and resonant topologies for best-in-class efficiency.
Product Description
Infineon IGP20N65H5XKSA1 IGBT transistor is engineered to deliver high performance in electronic switching and power handling applications. With a continuous collector current rating of 20 amperes and a collector emitter voltage maximum of 650 volts, it is ideal for medium power circuits.
Featuring a TO-220 package, this IGBT ensures effective heat dissipation and ease of installation on various heatsinks and circuit boards. Its maximum power dissipation is rated at 125 watts, supporting stable operation at elevated currents.
The component meets JEDEC industry standards and belongs to Infineon's high speed fifth generation IGBT series, which offers excellent efficiency in switching applications. The maximum gate emitter voltage ranges between ±20 and ±30 volts, providing safe threshold limits during operation.
Operating temperature ranges from -40°C to 175°C, enabling its use in harsh industrial environments. Its compact physical dimensions of 29.95 mm length, 10.36 mm width, and 4.57 mm height make it suitable for dense electronic assemblies.
The transistor is suitable for use in solar converters, uninterruptible power supplies, and welding converters due to its robust electrical characteristics. It operates efficiently in mid to high switching frequency power converters, meeting the demands of modern industrial and commercial power electronics.
Its design supports hard switching and resonant topologies, ensuring best-in-class efficiency. The product is supplied in a tube format ready for insertion into manufacturing processes, enhancing production workflow.
This Infineon IGBT transistor plays an important role in industrial power electronics and energy management systems. Discover more industrial-grade semiconductor components and related products within our comprehensive electronics and semiconductors category at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this model is 20 amperes.
This transistor has a maximum collector emitter voltage rating of 650 volts.
It supports a maximum power dissipation of 125 watts.
The dimensions are 29.95 mm in length, 10.36 mm in width, and 4.57 mm in height.
The operating temperature ranges from -40°C to 175°C.
The maximum gate emitter voltage is ±20 to ±30 volts.
It uses a TO-220 package type, which facilitates effective heat dissipation.
It complies with JEDEC industry standards.
This model is suitable for solar converters, uninterruptible power supplies, and welding converters.
It operates efficiently in mid to high switching frequency power converters.
This IGBT belongs to Infineon's high speed fifth generation series.
It supports hard switching and resonant topologies for enhanced efficiency.
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