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Infineon N-Channel Power MOSFET 19.4 A, 100 V, 3-Pin TO-220, Through Hole Mount IPP050N10NF2SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP050N10NF2SAKMA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP050N10NF2S |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current of 19.4 A for high current applications.
- Rated for 100 V maximum drain to source voltage providing robust operation.
- Through hole mount type with 3-pin TO-220 package for easy PCB integration.
- Low maximum drain-source resistance of 5 mΩ minimizes power losses.
- Maximum gate-source voltage of 20 V ensures safe gate control.
- Forward voltage of 1.2 V allows efficient switching performance.
- Maximum power dissipation rated at 150 W supports demanding power designs.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
Product Description
Infineon IPP050N10NF2SAKMA1 is a high-performance N-Channel Power MOSFET designed for a wide range of power electronic applications. It features a maximum continuous drain current of 19.4 A and a drain-source voltage rating of 100 V, housed in a 3-pin TO-220 package suitable for through hole mounting.
This MOSFET offers a low on-resistance of 5 mΩ, which significantly improves efficiency by reducing conduction losses. It has a forward voltage drop of 1.2 V and a gate-source voltage rating of up to 20 V, ensuring reliable gate control and switching performance.
Rated for maximum power dissipation of 150 W, the device withstands high power loads while operating in a wide temperature range from -55°C to 175°C, making it well suited for industrial, automotive, and commercial electronics applications requiring robust and durable semiconductors.
The typical gate charge of 51 nC at a gate voltage of 5 V facilitates fast switching, enhancing performance in switching and amplification circuits. The compact TO-220 package with dimensions of 4.57 mm width, 9.45 mm height, and 10.36 mm length is ideal for space-constrained designs requiring through hole mounting solutions.
This MOSFET is 100% avalanche tested for reliability and designed for drop-in replacement in various power control applications. It is optimized for use in industrial power supplies, motor control circuits, inverters, and power management in automotive and consumer electronics.
High-efficiency N-channel MOSFET supporting heavy current loads up to 19.4 A. Robust 100 V drain-source voltage rating for demanding power applications. Through hole mounting with 3-pin TO-220 package ensures stable and easy mounting.
Low on-resistance reduces heat generation and increases efficiency. Wide operating temperature range suitable for industrial and automotive environments. Fast switching capabilities enabled by low gate charge. Compact dimensions enable integration into tight electronic layouts.
Application versatility including power management, industrial controls, and automotive electronics. Explore more Infineon power semiconductor products in EnvMart for comprehensive solutions tailored to industrial and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19.4 A, making it suitable for high current applications.
It has a maximum drain-source voltage rating of 100 V, providing robust operation for demanding applications.
The maximum drain-source resistance is 5 mΩ, which helps minimize power losses in the circuit.
The maximum gate-source voltage for this model is 20 V, ensuring safe gate control during operation.
The forward voltage drop is 1.2 V, which contributes to its efficient switching performance.
It is rated for a maximum power dissipation of 150 W, supporting demanding power designs.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
The dimensions of the TO-220 package are 4.57 mm in width, 9.45 mm in height, and 10.36 mm in length.
The typical gate charge is 51 nC at a gate voltage of 5 V, facilitating fast switching capabilities.
This model is optimized for use in industrial power supplies, motor control circuits, inverters, and power management in automotive and consumer electronics.
This MOSFET has a pin count of 3, suitable for through hole mounting.
The country of origin for this MOSFET is India.
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