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Infineon N-Channel IGBT 77 A 600 V 3-Pin TO-247 Through Hole IKFW90N60EH3XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKFW90N60EH3XKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 77A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 178W |
| Maximum Gate Emitter Voltage VGEO | 30 V |
Key Features
- Maximum continuous collector current of 77 A ensures high current handling capability.
- Maximum collector emitter voltage of 600 V suitable for medium voltage applications.
- Low saturation voltage of 2.3 V reduces conduction losses.
- Robust TO-247 package with through-hole mounting facilitates reliable installation.
- Wide operating temperature range from -40°C to 175°C for harsh environments.
- Incorporates TrenchStop technology for enhanced switching performance.
- Equipped with a very soft, fast recovery anti-parallel diode for efficiency.
- Positive temperature coefficient minimizes thermal runaway risks.
Product Description
Infineon IKFW90N60EH3XKSA1 is a high-performance N-Channel IGBT optimized for industrial and electronic power control applications. Featuring a continuous collector current of 77 A and a maximum voltage rating of 600 V, this device efficiently handles substantial power loads while minimizing switching losses through advanced TrenchStop technology.
The device is housed in a TO-247 package with a 3-pin, through-hole mount design, allowing for secure mechanical and electrical connection in power modules and converters. It operates reliably across a broad temperature range from -40°C to 175°C, making it suited for demanding environments including manufacturing, industrial drives, and power supply systems.
Key performance aspects include a low collector emitter saturation voltage (2.3 V) that reduces conduction losses, a very soft and fast recovery anti-parallel diode ensuring minimal switching noise, and a positive temperature coefficient improving thermal stability. The product complies with JEDEC standards 47, 20, and 22, demonstrating verified reliability.
This IGBT is ideal for switching applications requiring fast recovery and high efficiency, such as motor control, power inverters, UPS systems, and renewable energy installations. Maximum continuous collector current of 77 A ensures high current handling capability.
Maximum collector emitter voltage of 600 V suitable for medium voltage applications. Low saturation voltage of 2.3 V reduces conduction losses. Robust TO-247 package with through-hole mounting facilitates reliable installation.
Wide operating temperature range from -40°C to 175°C for harsh environments. Incorporates TrenchStop technology for enhanced switching performance. Equipped with a very soft, fast recovery anti-parallel diode for efficiency.
Positive temperature coefficient minimizes thermal runaway risks. Maximum gate emitter voltage of 30 V for gate drive compatibility. 3-pin configuration enables straightforward circuit integration. Discover more industrial semiconductor components from EnvMart for your advanced electronic designs and power management solutions.
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Frequently Asked Questions
The maximum continuous collector current of the Infineon IKFW90N60EH3XKSA1 is 77 A, ensuring high current handling capability for various applications.
This model has a maximum collector emitter voltage rating of 600 V, making it suitable for medium voltage applications.
The collector emitter saturation voltage of this unit is 2.3 V, which helps reduce conduction losses during operation.
It operates reliably across a wide temperature range from -40°C to 175°C, suitable for harsh environments.
This model features a robust TO-247 package with a through-hole mounting design, facilitating reliable installation.
It incorporates TrenchStop technology, which enhances switching performance and efficiency.
The maximum gate emitter voltage for this IGBT is 30 V, allowing for compatibility with standard gate drive circuits.
This IGBT has a 3-pin configuration, enabling straightforward circuit integration.
The maximum power dissipation for the Infineon IKFW90N60EH3XKSA1 is 178 W, indicating its capability to handle substantial power loads.
It complies with JEDEC standards 47, 20, and 22, demonstrating verified reliability for industrial applications.
This model is ideal for applications such as motor control, power inverters, UPS systems, and renewable energy installations.
It is equipped with a very soft, fast recovery anti-parallel diode, which ensures minimal switching noise and improved efficiency.
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