Infineon N-Channel IGBT 80A 650V 3-Pin PG-TO-263 Surface Mount IGB50N65S5ATMA1

Infineon IGB50N65S5ATMA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for advanced power switching applications. It features a maximum continuous collector current of 80 amperes and a maximum collector-emitter voltage of 650 volts, making it suitable for industrial and automotive power electronics requiring reliable high current and voltage handling.

This device comes in a PG-TO-263 surface mount package with 3 pins, facilitating compact and efficient PCB assembly. The maximum power dissipation rating of 270 watts supports efficient thermal designs, enabling continuous operation under demanding loads.

With a maximum gate-emitter voltage of 30 volts and a low collector-emitter saturation voltage of 1.7 volts, the IGB50N65S5ATMA1 ensures low conduction losses and enhanced efficiency. The operational temperature range spans from -40°C to 175°C, allowing stable functionality in extreme environmental conditions.

Belonging to the TrenchStop series, this IGBT benefits from optimized switching characteristics for improved electrical performance and durability. It includes an anti-parallel diode that eliminates the need for an external gate clamping component and minimizes tail current, making it ideal for paralleling multiple devices.

This component is designed for use in industrial power converters, motor drives, inverters, and other electronic control systems requiring robust, efficient power switching devices.

Maximum continuous collector current of 80 A. Maximum collector-emitter voltage of 650 V. Power dissipation of 270 W. 3-pin PG-TO-263 surface mount package. Maximum gate-emitter voltage of 30 V. Low saturation voltage of 1.7 V at 25°C.

Wide operating temperature range from -40°C to 175°C. TrenchStop series technology. Explore our extensive range of semiconductor products at EnvMart for your industrial and electronics manufacturing needs.