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Infineon CoolMOS N-Channel MOSFET, 9 A, 650 V Enhancement Mode, 3-Pin TO-252 IPD60R280CFD7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD60R280CFD7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-252 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 51W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current is 9 amps for efficient power handling.
- Maximum drain-source voltage rating is 650 volts for high-voltage applications.
- Surface mount TO-252 package with 3 pins ensures reliable soldering and compact design.
- Enhancement mode N-channel MOSFET provides voltage controlled switching.
- Maximum power dissipation of 51 watts allows for thermal resilience.
- Typical gate charge of 18 nanocoulombs optimizes switching performance.
- Low maximum drain-source resistance (Rds) of 280 milliohms minimizes conduction losses.
- Maximum gate-source voltage is 20 volts, ensuring robust gate drive range.
Product Description
Infineon's IPD60R280CFD7ATMA1 is a CoolMOS N-Channel MOSFET designed for efficient switching in medium power applications. This device supports a maximum continuous drain current of 9 A and withstands drain-source voltages up to 650 V, making it suitable for industrial, automotive, and power management circuit designs.
The MOSFET utilizes an enhancement mode field-effect transistor design, controlled by voltage applied to the gate terminal. Packaged in a 3-Pin TO-252 surface mount format, the device offers compactness and ease of PCB integration.
The CoolMOS series is engineered for optimized switching speed and low conduction losses, emphasized by its maximum drain-source resistance of 280 mΩ and typical gate charge of 18 nC at Vgs. It can dissipate up to 51 W of power, supporting robust thermal management in demanding environments.
Additional features include a forward voltage drop of approximately 1 V and gate voltage tolerance up to 20 V. The MOSFET is RoHS compliant, classified as a green product, and meets MSL1 up to 260°C peak reflow standards. Although not automotive grade, it suits a broad range of power electronics applications.
Maximum continuous drain current: 9 A. Drain-source voltage rating: 650 V. 3-Pin TO-252 surface mount package. Enhancement mode N-channel MOSFET operation. Low Rds(on) of 280 mΩ for efficient conduction. Typical gate charge of 18 nC for fast switching.
Maximum power dissipation of 51 W. Forward voltage drop around 1 V. Gate source maximum voltage 20 V.
This MOSFET is ideal for industrial power supply circuits, motor control, and other electronic designs requiring efficient medium voltage switching. Its compact package and electrical characteristics make it well-suited for assembly in consumer electronics, industrial, and laboratory instrumentation.
Explore more Infineon semiconductor products and related electronic components on EnvMart to find devices perfectly matching your technical and industrial requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A, allowing for efficient power handling in various applications.
It has a maximum drain-source voltage rating of 650 V, making it suitable for high-voltage applications.
This model comes in a 3-Pin TO-252 surface mount package, which ensures reliable soldering and compact design.
The maximum power dissipation for this MOSFET is 51 W, supporting robust thermal management.
The typical gate charge is 18 nC at Vgs, which optimizes switching performance.
The maximum gate-source voltage for this model is 20 V, ensuring a robust gate drive range.
It features a low maximum drain-source resistance (Rds) of 280 mΩ, which minimizes conduction losses.
The dimensions of this model are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
It is suitable for industrial power supply circuits, motor control, and other electronic designs requiring efficient medium voltage switching.
Yes, this MOSFET is RoHS compliant and classified as a green product.
The forward voltage drop is approximately 1 V, which is relevant for its performance in switching applications.
This model is an N-channel MOSFET, utilizing enhancement mode operation for voltage-controlled switching.
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