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Infineon IPA60R N-Channel Power MOSFET, 6 A, 600 V, Enhancement Mode, 3-Pin TO-220 IPA60R600P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R600P7SXKSA1 |
| Mount Type | Surface |
| Series | IPA60R |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
Key Features
- Features enhancement mode channel operation for efficient switching.
- Designed with CoolMOS™ P7 technology for high efficiency and low gate charge.
- Includes integrated gate resistor enhancing ruggedness and performance.
- Rugged body diode offers reliable reverse current handling.
- Provides electrostatic discharge (ESD) ruggedness of at least 2 kV (HBM Class 2).
- Compact TO-220 surface mount package for easy integration in power circuits.
- Ideal for power supply, industrial, and electronic applications requiring reliable MOSFET switching.
- Wide portfolio availability including both standard and industrial grade parts.
Product Description
Infineon IPA60R600P7SXKSA1 is a high-performance N-Channel Power MOSFET designed for efficient switching applications. It operates at a maximum continuous drain current of 6 A and withstands drain-source voltage of up to 600 V. This MOSFET is packaged in a compact 3-pin TO-220 configuration suitable for surface mounting, making it adaptable to various circuit designs.
Built on Infineon's advanced CoolMOS™ 7th generation P7 technology, it offers best-in-class on-resistance (Ron) combined with a low gate charge ensuring excellent efficiency and reduced power loss. Its integrated gate resistor enhances electrical robustness by diminishing ringing and oscillations during switching events.
The device includes a rugged body diode capable of handling reverse conduction safely and has an electrostatic discharge ruggedness rating of ≥ 2 kV (Human Body Model class 2), making it reliable for industrial and commercial electronic designs. The product complies with standard semiconductor quality and reliability protocols though no specific certifications are listed.
This MOSFET is ideal for use in power supply units, motor controls, industrial automation, and other electronic circuits requiring reliable, high-speed switching. Its TO-220 package facilitates straightforward thermal management with suitable heat sinking.
Infineon offers this model in both standard and industrial grade options to suit varying application demands. The device follows surface mount configuration, simplifying PCB integration.
Features enhancement mode N-Channel type operation. Maximum continuous drain current of 6 A. Drain-source voltage rating of 600 V. TO-220 surface mount package with 3 pins. Integrated gate resistor for switching performance.
Rugged body diode for reverse current. ESD ruggedness ≥ 2 kV HBM class 2. Suitable for power electronics and industrial applications. Explore more semiconductor devices and Power MOSFETs available for diverse electronics manufacturing needs on EnvMart.
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Frequently Asked Questions
The Infineon IPA60R600P7SXKSA1 has a maximum continuous drain current of 6 A.
This model can withstand a maximum drain-source voltage of 600 V.
It is packaged in a compact 3-pin TO-220 configuration suitable for surface mounting.
It is built on Infineon's advanced CoolMOS™ 7th generation P7 technology, which ensures high efficiency and low gate charge.
Yes, it includes an integrated gate resistor that enhances electrical robustness by reducing ringing and oscillations during switching events.
The device has an electrostatic discharge ruggedness rating of at least 2 kV, classified as HBM Class 2.
This model features an enhancement mode N-Channel type operation.
It is ideal for use in power supply units, motor controls, industrial automation, and other electronic circuits requiring reliable, high-speed switching.
The maximum drain-source resistance (Rds) is 600 mΩ.
The Infineon IPA60R600P7SXKSA1 is manufactured in India.
This model is part of the IPA60R series.
Key features include enhancement mode operation, a maximum continuous drain current of 6 A, a maximum drain-source voltage of 600 V, and a rugged body diode for reliable reverse current handling.
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